| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
278,154 pcs
|
278154 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type |
The Vishay Siliconix SI2302DDS is an N-Channel power MOSFET designed for load switching in portable devices and DC/DC converters. It features TrenchFET® technology and is 100% Rg tested.
Key electrical specifications include a maximum drain-source voltage (VDS) of 20V and a maximum on-resistance (RDS(on)) of 0.057 Ohms at a gate-source voltage (VGS) of 4.5V. The continuous drain current (ID) is rated at 2.9A at 25°C ambient temperature. The typical gate charge (Qg) is 3.5 nC.
This MOSFET is housed in a SOT-23 (TO-236) surface-mount package. It operates within a junction and storage temperature range of -55°C to +150°C. The device is available in lead (Pb)-free and halogen-free configurations.
Applications include load switching for portable devices and DC/DC converters. Its compact SOT-23 package makes it suitable for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20V.
The maximum on-resistance at VGS = 4.5V is 0.057 Ohms.
The continuous drain current at 25°C is 2.9A.
The SI2302DDS is available in a SOT-23 package.
The operating junction and storage temperature range is -55°C to +150°C.
The SI2302DDS is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.