Mfr Part #:

SI2302CDS-T1-GE3

Mfr Name: Vishay

The Vishay Dale SI2302CDS-T1-GE3 is an N-Channel MOSFET with a 20V drain-source voltage and 2.6A continuous current. It is supplied in a SOT-23 package.

✓ Total Stock: 692,983 pcs

$ Price Range: $0.99

SI2302CDS-T1-GE3 Available from 6 distributors

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Romaks Technologies ✓ Non-Authorised Inventory information	623,448 pcs On Request	623448 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	64,020 pcs On Request	64020 pcs	On Request	1	On Request	On Request	21+	On Request	2026-06-03 08:15:26
Xingangxin ✓ Non-Authorised Inventory information	4,030 pcs On Request	4030 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
PROSOFT ELECTRONICS ✓ Non-Authorised Inventory information	1,200 pcs On Request	1200 pcs	On Request	1	On Request	On Request	18+22+	On Request	On Request
Bristol Electronics ✓ Non-Authorised Inventory information	148 pcs On Request	148 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Speed Components Ltd ✓ Non-Authorised Inventory information	137 pcs On Request	137 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

SI2302CDS-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI2302CDS-T1-GE3 is an N-Channel MOSFET designed for load switching in portable devices and DC/DC converters. It features a maximum drain-source voltage of 20V and a continuous drain current of 2.6A at 25°C.

The MOSFET offers a low on-resistance of 57mOhm at a gate-source voltage of 4.5V, with a typical gate charge of 3.5nC. It operates within a temperature range of -55°C to 150°C.

This component is housed in a compact SOT-23 (TO-236-3) surface-mount package, making it suitable for space-constrained applications. The maximum power dissipation is rated at 710mW at 25°C ambient temperature.

SI2302CDS-T1-GE3 Quick Information

Product Type: MOSFET

Canonical Name: Vishay Dale SI2302CDS-T1-GE3 N-Channel 20V 2.6A SOT-23 MOSFET

Subcategory: N-Channel

SI2302CDS-T1-GE3 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

SI2302CDS-T1-GE3 Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2302CDS-T1-GE3 Features

N-Channel MOSFET with 20V drain-source voltage.
Continuous drain current of 2.6A.
Low on-resistance of 57mOhm.
Compact SOT-23 surface-mount package.
Wide operating temperature range.

SI2302CDS-T1-GE3 Applications

Suitable for load switching.
Used in DC/DC converters.
Ideal for portable devices.

SI2302CDS-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage?

20V minimum at VGS=0V, ID=250µA.

What is the package type?

SOT-23-3 surface-mount package (also TO-236-3, SC-59).

What is the operating temperature range?

-55°C to 150°C junction temperature.

What is the maximum continuous drain current?

2.6A at 25°C ambient temperature.

What is the on-resistance?

57mOhm maximum at VGS=4.5V, ID=3.6A.

What is the gate threshold voltage?

850mV maximum at VDS=VGS, ID=250µA.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	2.6A (Ta)
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5.5 nC @ 4.5 V
Mounting Type	Surface Mount
Operating Temperature	-55 to +150 °C
Power Dissipation (Max)	710mW (Ta)
Rds On (Max) @ Id, Vgs	57mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Tape & Reel	Tape & Reel
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±8V
Vgs(th) (Max) @ Id	850mV @ 250µA