SI2302CDS-T1-E3 The Vishay Dale SI2302CDS-T1-E3 is an N-Channel MOSFET designed for load switching in portable devices and DC/DC converters. It operates at 20V with a continuous drain current of 2.6A.
Mfr Part #:

SI2302CDS-T1-E3

Available from 7 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2302CDS-T1-E3 is an N-Channel MOSFET designed for load switching in portable devices and DC/DC converters. It operates at 20V with a continuous drain current of 2.6A.
✓ Total Stock: 725,103 pcs
$ Price Range: $0.99

SI2302CDS-T1-E3 Available from 7 distributors

✓ Authorised
✓ Non-Authorised

SI2302CDS-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2302CDS-T1-E3 Description

Short technical summary and product information.

This N-Channel MOSFET from Vishay Dale, part number SI2302CDS-T1-E3, is suitable for applications such as load switching in portable devices and DC/DC converters. It features a Drain-Source Voltage (Vdss) of 20V and a continuous drain current of 2.6A at 25°C ambient temperature. The MOSFET has a maximum On-Resistance (Rds On) of 57mOhm at a gate-source voltage of 4.5V. It is housed in a compact SOT-23-3 (TO-236) surface-mount package. The operating temperature range is -55°C to 150°C.

 

The device utilizes TrenchFET power MOSFET technology. Key electrical parameters include a Gate-Source Voltage (Vgs) of ±8V and a Gate-Source Threshold Voltage (Vgs(th)) of 850mV maximum at 250µA. The typical Gate Charge (Qg) is 3.5nC at 4.5V. Power dissipation is rated at 710mW maximum at 25°C ambient temperature.

 

This component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1. The REACH status is unaffected.

SI2302CDS-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI2302CDS-T1-E3 N-Channel 20V MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

SI2302CDS-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2302CDS-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2302CDS-T1-E3 Features

  • 20V Drain-Source Voltage capability.
  • 2.6A continuous drain current.
  • Low 57mOhm Rds On at 4.5V.
  • Compact SOT-23 surface-mount package.
  • Wide -55°C to 150°C operating temperature.

SI2302CDS-T1-E3 Applications

  • Ideal for load switching.
  • Suitable for portable devices.
  • Used in DC/DC converters.

SI2302CDS-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the SI2302CDS-T1-E3?

The minimum drain-source breakdown voltage is 20V at VGS = 0V and ID = 250 µA.

What is the maximum continuous drain current?

The typical continuous drain current is 2.9A at 25°C ambient, with a typical value of 2.6A also specified at 25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 57mOhm at VGS = 4.5V and 75mOhm at VGS = 2.5V.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package does the SI2302CDS-T1-E3 come in?

It comes in a SOT-23-3 surface-mount package, also known as TO-236-3 or SC-59.

What is the maximum power dissipation?

The maximum power dissipation is 710mW at 25°C ambient temperature.

What is the gate threshold voltage?

The maximum gate-source threshold voltage is 850mV at VDS = VGS and ID = 250 µA.

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