| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000,009 pcs
|
2000009 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI2302ADS-T1-GE3 is an N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage of 20V and a continuous drain current of 2.1A at 25°C ambient temperature. The device offers a low on-resistance, with a maximum of 60mOhm at 3.6A and 4.5V gate-source voltage.
This MOSFET operates within a temperature range of -55°C to 150°C. It is packaged in a compact TO-236-3, SC-59, SOT-23-3 surface-mount package, making it suitable for space-constrained designs. The device is RoHS3 compliant and Halogen-free.
Key electrical characteristics include a gate threshold voltage of 1.2V maximum at 50µA and a gate charge of 10nC maximum at 4.5V. The input capacitance is rated at 300pF maximum at 10V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 20V.
The continuous drain current is 2.4A at 25°C.
The maximum Rds On is 60mOhm at 3.6A and 4.5V.
The operating junction and storage temperature range is -55°C to 150°C.
It is supplied in a TO-236-3, SC-59, SOT-23-3 package.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.