SI2302ADS-T1-E3 The Vishay Dale SI2302ADS-T1-E3 is an N-Channel MOSFET with a 20V drain-source voltage and 2.1A continuous current rating. It is supplied in a SOT-23-3 package.
Mfr Part #:

SI2302ADS-T1-E3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2302ADS-T1-E3 is an N-Channel MOSFET with a 20V drain-source voltage and 2.1A continuous current rating. It is supplied in a SOT-23-3 package.
✓ Total Stock: 4,433 pcs
$ Price Range: $0.99

SI2302ADS-T1-E3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SI2302ADS-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2302ADS-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI2302ADS-T1-E3 is an N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 2.1A at 25°C ambient temperature.

 

The MOSFET offers a low on-resistance (Rds On) of 60mΩ at a gate-source voltage (Vgs) of 4.5V and a drain current (Id) of 3.6A. The gate threshold voltage (Vgs(th)) is a maximum of 1.2V at 50µA. It operates within a temperature range of -55°C to 150°C.

 

This device is housed in a compact TO-236-3, SC-59, SOT-23-3 surface-mount package, making it suitable for space-constrained designs. The technology employed is MOSFET (Metal Oxide), and it is rated for a maximum power dissipation of 700mW at 25°C.

 

The SI2302ADS-T1-E3 is compliant with RoHS3 standards and has a Moisture Sensitivity Level (MSL) of 1. It also meets Halogen-free requirements.

SI2302ADS-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: SI2302ADS-T1-E3 N-Channel 20V 2.1A SOT-23 MOSFET
Subcategory: N-Channel

SI2302ADS-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2302ADS-T1-E3 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2302ADS-T1-E3 Features

  • N-Channel MOSFET with 20V drain-source voltage.
  • Continuous drain current of 2.1A.
  • Low on-resistance of 60mOhm at 4.5V.
  • Compact SOT-23-3 surface-mount package.
  • RoHS3 compliant and Halogen-free.

SI2302ADS-T1-E3 Applications

  • Suitable for power switching circuits.
  • Ideal for low-voltage applications.
  • Used in portable electronic devices.
  • Effective in battery management systems.

SI2302ADS-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 20V.

What is the maximum gate threshold voltage?

The maximum gate threshold voltage is 1.2V.

What is the continuous drain current?

The continuous drain current is 2.1A at 25°C.

What is the Rds On (Max) at 4.5V Vgs?

The Rds On (Max) is 60mOhm at 3.6A and 4.5V Vgs.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package is this MOSFET in?

This MOSFET is in a TO-236-3, SC-59, SOT-23-3 package.

Is this MOSFET RoHS compliant?

Yes, this MOSFET is RoHS3 Compliant.

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