SI2302ADS-T1 The Vishay Dale SI2302ADS-T1 is an N-Channel MOSFET with a 20V drain-source voltage and 2.1A continuous drain current. It is supplied in a SOT-23-3 package.
Mfr Part #:

SI2302ADS-T1

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2302ADS-T1 is an N-Channel MOSFET with a 20V drain-source voltage and 2.1A continuous drain current. It is supplied in a SOT-23-3 package.
✓ Total Stock: 2,375 pcs
$ Price Range: $0.99

SI2302ADS-T1 Available from 1 distributor

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✓ Non-Authorised
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2,375 pcs
2375 pcs On Request 1 On Request On Request On Request On Request On Request

SI2302ADS-T1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2302ADS-T1 Description

Short technical summary and product information.

The Vishay Dale SI2302ADS-T1 is a single N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 2.1A at 25°C ambient temperature.

 

The MOSFET offers a low on-resistance (Rds On) of 60mOhm at a gate-source voltage (Vgs) of 4.5V and a drain current (Id) of 3.6A. The gate threshold voltage (Vgs(th)) is a maximum of 1.2V at 50µA. It operates within a temperature range of -55°C to 150°C.

 

This device is available in a compact TO-236-3, SC-59, SOT-23-3 surface mount package, making it suitable for space-constrained designs. The input capacitance (Ciss) is 300pF at 10V, and the gate charge (Qg) is 10nC at 4.5V.

 

The SI2302ADS-T1 is manufactured using MOSFET technology and is RoHS compliant. It is also halogen-free, meeting stringent environmental standards.

SI2302ADS-T1 Quick Information

Product Type: MOSFET
Canonical Name: SI2302ADS-T1 N-Channel 2.5-V (G-S) MOSFET
Subcategory: Single

SI2302ADS-T1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2302ADS-T1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2302ADS-T1 Features

  • 20V drain-source breakdown voltage.
  • 2.1A continuous drain current.
  • 60mOhm maximum on-resistance.
  • N-Channel MOSFET technology.
  • SOT-23-3 surface mount package.

SI2302ADS-T1 Applications

  • Suitable for power switching circuits.
  • Ideal for space-constrained designs.
  • Used in general electronic applications.
  • Meets RoHS compliance requirements.

SI2302ADS-T1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the SI2302ADS-T1?

The drain-source breakdown voltage is 20V.

What is the maximum gate threshold voltage for this MOSFET?

The gate threshold voltage is a maximum of 1.2V at 50µA.

What is the continuous drain current rating?

The continuous drain current is 2.1A at 25°C.

What is the on-resistance of the SI2302ADS-T1?

The Rds On is a maximum of 60mOhm at 3.6A and 4.5V.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package is the SI2302ADS-T1 supplied in?

It is supplied in a TO-236-3, SC-59, SOT-23-3 package.

Is this MOSFET halogen-free?

Yes, it is halogen-free.

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