SI2301CDS-T1-GE3 The Vishay SI2301CDS-T1-GE3 is a P-Channel MOSFET designed for load switching applications. It features a 20V drain-source voltage and a continuous drain current of 3.1A.
Mfr Part #:

SI2301CDS-T1-GE3

Available from 8 distributors
Mfr Name: Vishay
Vishay
The Vishay SI2301CDS-T1-GE3 is a P-Channel MOSFET designed for load switching applications. It features a 20V drain-source voltage and a continuous drain current of 3.1A.
✓ Total Stock: 1,075,053 pcs
$ Price Range: $0.99

SI2301CDS-T1-GE3 Available from 8 distributors

✓ Authorised
✓ Non-Authorised

SI2301CDS-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2301CDS-T1-GE3 Description

Short technical summary and product information.

The Vishay SI2301CDS-T1-GE3 is a P-Channel TrenchFET power MOSFET with a 20V drain-source breakdown voltage. It is designed for applications such as load switching.

 

Key electrical characteristics include a maximum continuous drain current of 3.1A at 25°C (Tc) and a maximum drain-source on-state resistance of 112mOhm at 2.8A and 4.5V Vgs. The gate-source voltage range is ±8V, with a threshold voltage of 1V at 250µA.

 

This MOSFET operates within a temperature range of -55°C to 150°C. It is supplied in a SOT-23-3 (TO-236) surface-mount package, suitable for compact designs. The device is compliant with RoHS 3 standards and is halogen-free.

SI2301CDS-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay SI2301CDS-T1-GE3 P-Channel 20V 3.1A SOT-23 MOSFET
Subcategory: P-Channel

SI2301CDS-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2301CDS-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2301CDS-T1-GE3 Features

  • P-Channel 20V TrenchFET Power MOSFET
  • 3.1A continuous drain current
  • Low Rds On: 112mOhm max @ 4.5V Vgs
  • SOT-23-3 surface-mount package
  • Halogen-free and RoHS 3 compliant

SI2301CDS-T1-GE3 Applications

  • Suitable for load switch applications
  • Used in portable electronic devices
  • Ideal for power management circuits
  • Applicable in DC-DC converter designs

SI2301CDS-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SI2301CDS-T1-GE3?

The drain-source breakdown voltage is 20V.

What is the maximum continuous drain current?

The maximum continuous drain current is 3.1A at 25°C (Tc).

What is the Rds On at specified conditions?

The Rds On is a maximum of 112mOhm at an ID of 2.8A and VGS of 4.5V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SI2301CDS-T1-GE3 supplied in?

It is supplied in a SOT-23-3 (TO-236) surface-mount package.

Is this MOSFET RoHS compliant?

Yes, this MOSFET is RoHS 3 compliant.

Is this MOSFET halogen-free?

Yes, this MOSFET is halogen-free.

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