Mfr Part #:

SI2301CDS-T1-GE3

Name: SI2301CDS-T1-GE3
Brand: Vishay
SKU: SI2301CDS-T1-GE3
Availability: InStock

Mfr Name: Vishay

Description:

MOSFET P-CH 20V 3.1A SOT23-3

✓ Total Stock: 692,784 pcs

SI2301CDS-T1-GE3 Available from 5 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Bristol Electronics ✓ Non-Authorised Inventory information	68 pcs On Request	68 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Innova Technologies ✓ Non-Authorised Inventory information	86 pcs On Request	86 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Fe Components ✓ Non-Authorised Inventory information	2,000 pcs On Request	2000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Components Technology Group, Inc. ✓ Non-Authorised Inventory information	21,000 pcs On Request	21000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Romaks Technologies ✓ Non-Authorised Inventory information	669,630 pcs On Request	669630 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

Short technical summary and product information.

MOSFET P-CH 20V 3.1A SOT23-3

Mfr Standard Lead Time: 12 weeks (varies by distributor)

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Same form/fit/function or matching attribute configuration across different manufacturers.

SI2301CDS-T1-E3

Vishay Siliconix

MOSFET P-CH 20V 3.1A SOT23-3

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	3.1A (Tc)
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	405 pF @ 10 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	860mW (Ta), 1.6W (Tc)
Rds On (Max) @ Id, Vgs	112mOhm @ 2.8A, 4.5V
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±8V
Vgs(th) (Max) @ Id	1V @ 250µA