| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,457 pcs
|
1457 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI2301CDS-T1-E3 is a P-Channel MOSFET designed for load switch applications. It features TrenchFET technology and offers a drain-source breakdown voltage of 20V.
Key electrical characteristics include a maximum continuous drain current of 3.1A at 25°C case temperature and a maximum power dissipation of 1.6W (Tc). The on-state resistance is as low as 0.112 Ohms at VGS = -4.5V and ID = -2.8A. The gate-source threshold voltage is typically -1V at 250µA.
This MOSFET operates within a temperature range of -55°C to 150°C. It is supplied in a compact TO-236-3, SC-59, SOT-23-3 surface mount package, making it suitable for space-constrained designs.
The device is RoHS3 compliant and Halogen-free, indicating adherence to environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-20 V
±8V
0.112 Ohm
-55°C ~ 150°C
TO-236-3, SC-59, SOT-23-3
RoHS3 Compliant
1 Unlimited