SI2301BDS-T1-GE3 The Vishay Dale SI2301BDS-T1-GE3 is a P-Channel MOSFET with a 20V drain-source voltage and 2.2A continuous current rating. It is supplied in a compact SOT-23-3 package.
Mfr Part #:

SI2301BDS-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2301BDS-T1-GE3 is a P-Channel MOSFET with a 20V drain-source voltage and 2.2A continuous current rating. It is supplied in a compact SOT-23-3 package.
✓ Total Stock: 330 pcs
$ Price Range: $0.99

SI2301BDS-T1-GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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330 pcs
330 pcs On Request 1 On Request On Request 21+ On Request On Request

SI2301BDS-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2301BDS-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI2301BDS-T1-GE3 is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 2.2A at 25°C.

 

This MOSFET offers a low on-state resistance (Rds(on)) of 100mOhm at 2.8A and 4.5V gate-source voltage, ensuring efficient power handling. The gate threshold voltage (Vgs(th)) is typically -0.45V at 250µA. It operates across a wide temperature range from -55°C to 150°C.

 

Packaged in a surface-mount TO-236-3, SC-59, or SOT-23-3, the SI2301BDS-T1-GE3 is suitable for space-constrained designs. It is compliant with RoHS3 standards and has a Moisture Sensitivity Level (MSL) of 1.

 

Key electrical characteristics include a gate-source voltage (Vgs) range of ±8V and an input capacitance (Ciss) of 375pF at 6V. The device is manufactured using MOSFET technology.

SI2301BDS-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI2301BDS-T1-GE3 P-Channel MOSFET
Subcategory: Single

SI2301BDS-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2301BDS-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2301BDS-T1-GE3 Features

  • P-Channel MOSFET with 20V drain-source voltage.
  • Continuous drain current of 2.2A.
  • Low Rds(on) of 100mOhm at 2.8A, 4.5V.
  • Wide operating temperature range of -55°C to 150°C.
  • Surface mount SOT-23-3 package.

SI2301BDS-T1-GE3 Applications

  • Suitable for general switching applications.
  • Ideal for power management circuits.
  • Used in battery-powered devices.
  • Applicable in portable electronics.
  • Designed for space-constrained systems.

SI2301BDS-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI2301BDS-T1-GE3?

The maximum drain-source voltage (Vds) for the SI2301BDS-T1-GE3 is 20V.

What is the continuous drain current rating?

The continuous drain current (Id) is 2.2A at 25°C.

What is the typical on-state resistance?

The typical on-state resistance (Rds On) is 100mOhm at 2.8A and 4.5V gate-source voltage.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI2301BDS-T1-GE3 supplied in?

The SI2301BDS-T1-GE3 is supplied in a TO-236-3, SC-59, or SOT-23-3 package.

Is this MOSFET RoHS compliant?

Yes, this component is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level (MSL) is 1.

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