| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SI2301 is a versatile N-channel enhancement-mode MOSFET manufactured by Vishay Dale. It is widely utilized in electronic applications requiring efficient switching and amplification in low-voltage circuits. This component is known for its low on-resistance, fast switching speeds, and low threshold voltage, making it suitable for battery-operated devices and power management applications.
Key electrical specifications include a maximum Drain-Source Voltage of 20V and a Continuous Drain Current of 2.5A. The On-Resistance is rated at 120mΩ, and the Threshold Voltage ranges from 1V to 2.5V. These characteristics contribute to minimized power loss and improved efficiency in circuit designs.
The SI2301 is housed in a compact SOT-23 package, facilitating integration into space-constrained electronic assemblies. Its design is optimized for quick response in switching applications, further enhancing its utility in modern electronic systems.
The maximum Drain-Source Voltage for the SI2301 is 20V.
The SI2301 has a continuous Drain Current rating of 2.5A.
The On-Resistance of the SI2301 is 120mΩ.
The Threshold Voltage for the SI2301 ranges from 1V to 2.5V.
The SI2301 is supplied in a SOT-23 package.