| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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36,214 pcs
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36214 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Automotive Grade | |
| Industrial Grade | |
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| Medical Grade | |
| Military Grade | |
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The SI2300DS-T1-GE3 from VBsemi is an N Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 6A. The device exhibits a low on-resistance of 28 mOhms at a gate-source voltage (Vgs) of 4.5V and a drain current (Id) of 5A.
This MOSFET has a power dissipation (Pd) of 2.1W and a typical gate threshold voltage (Vgs(th)) of 1V at 250uA. It operates within a temperature range of -55 C to +150 C.
The component is housed in a compact SOT-23 surface-mount package, making it suitable for space-constrained designs. Its electrical characteristics and package type lend themselves to general-purpose switching and amplification tasks in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 20V.
The continuous drain current (Id) is 6A.
The drain-source on-resistance (Rds(on)) is 28 mOhms at 4.5V Vgs and 5A Id.
The power dissipation (Pd) is 2.1W.
The operating temperature range is -55 C to +150 C.
It is an N Channel MOSFET.
It is supplied in a SOT-23 package.