| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
301,000 pcs
|
301000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
760 pcs
|
760 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The SI1972DH-T1-E3 from Vishay Dale is a Dual N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vds) of 30V and can handle a continuous drain current of up to 1.3A.
Key electrical characteristics include a maximum on-resistance (Rds On) of 225mOhm at 1.3A and 10V, and a maximum gate charge (Qg) of 2.8nC at 10V. The gate threshold voltage (Vgs(th)) is a maximum of 2.8V at 250µA. Input capacitance (Ciss) is rated at 75pF at 15V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in a compact SC-70-6 surface-mount package, suitable for applications where space is a constraint. The device is RoHS3 compliant and Lead Free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
SC-70-6.
-55°C to 150°C.
1.3A.
225mOhm maximum at 1.3A and 10V gate-source voltage.
2.8nC maximum at 10V.
2.8V maximum at 250µA drain current.