SI1967DH-T1-GE3 The Vishay Dale SI1967DH-T1-GE3 is a Dual P-Channel MOSFET with a 20V drain-source voltage rating and 1.3A continuous drain current. It is available in a compact SC-70-6 package.
Mfr Part #:

SI1967DH-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1967DH-T1-GE3 is a Dual P-Channel MOSFET with a 20V drain-source voltage rating and 1.3A continuous drain current. It is available in a compact SC-70-6 package.
✓ Total Stock: 7,145 pcs
$ Price Range: $0.99

SI1967DH-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,020 pcs
7020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
125 pcs
125 pcs On Request 1 On Request On Request 21+ On Request On Request

SI1967DH-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI1967DH-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI1967DH-T1-GE3 is a Dual P-Channel MOSFET designed for load switch applications in portable devices. It features a 20V drain-source voltage and a continuous drain current of up to 1.3A at 25°C.

 

Key electrical characteristics include a maximum Rds(on) of 490mΩ at 910mA and 4.5V Vgs, and a gate charge of 4nC at 8V Vgs. The device operates over a wide temperature range of -55°C to 150°C.

 

Packaged in a space-saving SC-70-6 (SOT-363) surface-mount package, this MOSFET is suitable for applications where board space is limited. It also offers features like a logic level gate and is optimized for PWM applications.

 

The device is compliant with RoHS Directive 2002/95/EC and is halogen-free according to IEC 61249-2-21 definition.

SI1967DH-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale Si1967DH Dual P-Channel 20V MOSFET
Subcategory: P-Channel

SI1967DH-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1967DH-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1967DH-T1-GE3 Features

  • Dual P-Channel 20V MOSFET.
  • 1.3A continuous drain current.
  • Low Rds(on) of 490mΩ.
  • Logic Level Gate compatible.
  • SC-70-6 surface mount package.

SI1967DH-T1-GE3 Applications

  • Ideal for load switching in portable devices.
  • Used in DC-DC converter input stages.
  • Suitable for battery management circuits.
  • Applicable in small signal switching circuits.

SI1967DH-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI1967DH-T1-GE3?

The maximum drain-source voltage is 20V.

What is the continuous drain current of the SI1967DH-T1-GE3?

The continuous drain current is 1.3A at 25°C case temperature.

What is the Rds(on) for the SI1967DH-T1-GE3?

The Rds(on) is a maximum of 490mΩ at 910mA and 4.5V Vgs.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI1967DH-T1-GE3 in?

It is in an SC-70-6 package.

Is the SI1967DH-T1-GE3 RoHS compliant?

Yes, it is RoHS3 Compliant.

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