| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,333 pcs
|
8333 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale Si1967DH is a dual P-Channel MOSFET with a 20V drain-source voltage rating. It is designed for applications such as load switching in portable devices. This MOSFET offers a continuous drain current of up to 1.3A at 25°C and a maximum power dissipation of 1.25W at 25°C.
The device features a low Rds(on) of 490mΩ at 4.5V Vgs and 910mA Id, making it efficient for switching applications. The operating temperature range is -55°C to 150°C (TJ). It is supplied in a compact SC-70-6 package, suitable for surface mounting.
Key electrical characteristics include a gate-source threshold voltage of -0.4V typical and a gate charge of 1.6nC typical. The Si1967DH is PWM optimized and features TrenchFET technology. It is also RoHS compliant and halogen-free.
This MOSFET is ideal for designers seeking a reliable and efficient solution for power management in portable electronics. Its small footprint and robust performance characteristics make it a versatile component for various low-power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -20V minimum at VGS = 0V and ID = -250 µA.
It is available in an SC-70-6 surface-mount package, also described as 6-TSSOP, SC-88, SOT-363.
The operating junction and storage temperature range is -55°C to 150°C.
The typical gate-source threshold voltage is -0.4V, with a maximum of -1V at VDS = VGS and ID = -250 µA.
The maximum drain-source on-state resistance is 0.49Ω at VGS = -4.5V and ID = -0.91A.
The maximum continuous drain current is -1.3A at TC = 25°C.
The maximum power dissipation is 1.25W at TC = 25°C.