SI1965DH-T1-GE3 The Vishay Siliconix SI1965DH-T1-GE3 is a dual P-Channel MOSFET designed for load switching in portable devices. It operates at 12V and comes in a compact SC-70-6 package.
Mfr Part #:

SI1965DH-T1-GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Siliconix SI1965DH-T1-GE3 is a dual P-Channel MOSFET designed for load switching in portable devices. It operates at 12V and comes in a compact SC-70-6 package.
✓ Total Stock: 645,001 pcs
$ Price Range: $0.99

SI1965DH-T1-GE3 Available from 4 distributors

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✓ Non-Authorised

SI1965DH-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI1965DH-T1-GE3 Description

Short technical summary and product information.

The Vishay Siliconix SI1965DH-T1-GE3 is a dual P-Channel MOSFET featuring TrenchFET technology. It is rated for a Drain-Source Voltage (VDS) of 12V and offers a low On-Resistance (RDS(on)) of 390mOhm at 1A and 4.5V VGS. The device can handle a continuous drain current of up to 1.3A at 25°C case temperature and a maximum power dissipation of 1.25W at 25°C case temperature.

 

This MOSFET is configured as two P-Channel devices within a single package, making it suitable for applications such as load switches in portable electronics. It is supplied in a space-saving SC-70-6 (SOT-363) surface-mount package. The operating temperature range is from -55°C to +150°C.

 

Key electrical characteristics include a typical gate charge (Qg) of 1.7nC and a gate threshold voltage (VGS(th)) of 1V at 250µA. The device is designed for efficient power management in compact systems.

SI1965DH-T1-GE3 Quick Information

Product Type: MOSFET
Series: SI1965DH
Canonical Name: Vishay Siliconix SI1965DH-T1-GE3 Dual P-Channel 12 V MOSFET
Subcategory: Dual P-Channel

SI1965DH-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1965DH-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1965DH-T1-GE3 Features

  • Dual P-Channel 12V MOSFET.
  • Low Rds(on) of 390mOhm at 1A, 4.5V.
  • Compact SC-70-6 surface-mount package.
  • Suitable for portable device load switching.
  • TrenchFET power MOSFET technology.

SI1965DH-T1-GE3 Applications

  • Ideal for portable device load switches.
  • Used in battery-powered electronics.
  • Suitable for power management circuits.
  • Compact solution for space-limited designs.

SI1965DH-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI1965DH-T1-GE3?

The maximum drain-source voltage is -12 V.

What is the typical On-Resistance (Rds On) for this MOSFET?

The Rds On is 390mOhm at 1A and 4.5V Vgs.

What is the continuous drain current rating?

The continuous drain current is -1.3A at 25°C case temperature.

What package type is the SI1965DH-T1-GE3 supplied in?

It is supplied in an SC-70-6 package.

What is the operating temperature range?

The operating temperature range is -55°C to +150°C.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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