| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
258,286 pcs
|
258286 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI1965DH-T1-E3 is a Dual P-Channel MOSFET with a drain-source voltage rating of 12V and a continuous drain current of up to 1.3A. This device utilizes TrenchFET technology for efficient power handling.
Key electrical characteristics include a maximum on-state resistance of 390mΩ at 1A and 4.5V Vgs, and a typical gate charge of 1.7nC at 8V Vgs. The gate threshold voltage is 1V at 250µA.
This MOSFET is packaged in a compact SC-70-6 (SOT-363) surface-mount case, making it suitable for space-constrained applications. It operates within a temperature range of -55°C to +150°C.
The SI1965DH-T1-E3 is designed for applications such as load switching in portable electronic devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 12V.
The maximum continuous drain current is 1.3A at 25°C case temperature.
The Rds On is a maximum of 390mΩ at 1A and 4.5V Vgs.
The operating temperature range is -55°C to +150°C.
The device is in an SC-70-6 package.
Yes, it is RoHS3 Compliant.
The MSL is 1 Unlimited.