| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,086 pcs
|
2086 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
746 pcs
|
746 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI1926DL-T1-GE3 is a dual N-channel MOSFET with a Drain-Source Voltage (Vds) of 60V. It is designed for applications such as low power load switching. The device features a low Rds On of 1.4 Ohms at 340mA and 10V, and a Gate Charge (Qg) of 1.4nC at 10V.
This MOSFET is housed in a compact SC-70-6 (SOT-363) package, suitable for surface mounting. It offers ESD protection up to 1800V and operates within a temperature range of -55°C to 150°C. The continuous drain current is rated at 370mA at 25°C case temperature.
Key electrical characteristics include a Vgs(th) of 2.5V maximum at 250µA and a VDS temperature coefficient of -56.7mV/°C. The maximum power dissipation is 510mW at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 60V at VGS = 0V and ID = 250μA.
The maximum continuous drain current is 0.37A at TC = 25°C, and 0.34A at TA = 25°C.
The operating junction and storage temperature range is -55°C to 150°C.
It is available in SC-70-6, SOT-363, and 6-TSSOP/SC-88 surface-mount packages.
The maximum on-resistance is 1.4Ohm at 340mA and 10V gate drive, and 0.25Ohm at 3A and 4.5V.
Yes, it is ESD protected up to 1800V.