SI1926DL-T1-E3 The Vishay Dale SI1926DL-T1-E3 is a dual N-channel MOSFET designed for low power load switching applications. It offers 60V drain-source voltage and 370mA continuous drain current.
Mfr Part #:

SI1926DL-T1-E3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1926DL-T1-E3 is a dual N-channel MOSFET designed for low power load switching applications. It offers 60V drain-source voltage and 370mA continuous drain current.
✓ Total Stock: 408,797 pcs
$ Price Range: $0.99

SI1926DL-T1-E3 Available from 3 distributors

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✓ Non-Authorised
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401,778 pcs
401778 pcs On Request 1 On Request On Request On Request On Request On Request
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4,020 pcs
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2,999 pcs
2999 pcs On Request 1 On Request On Request 1327+ On Request On Request

SI1926DL-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

SI1926DL-T1-E3 Description

Short technical summary and product information.

The SI1926DL-T1-E3 from Vishay Dale is a dual N-channel MOSFET featuring TrenchFET power MOSFET technology. It is rated for a 60V drain-source voltage and a continuous drain current of up to 370mA at 25°C. The device offers low on-resistance, with a maximum of 1.4 Ohms at 340mA and 10V Vgs, and 0.25 Ohms at 3A and 4.5V Vgs.

 

This MOSFET is protected against electrostatic discharge (ESD) up to 1800V, enhancing its robustness in handling. It operates within a temperature range of -55°C to 150°C. The SI1926DL-T1-E3 is supplied in a compact SC-70-6 (SOT-363) surface-mount package, making it suitable for space-constrained designs.

 

Key electrical characteristics include a gate charge of 1.4nC typical at 10V Vgs and an input capacitance of 18.5pF at 30V Vds. The device is designed for applications such as low power load switching. Its configuration consists of two N-channel MOSFETs, providing flexibility in circuit design.

SI1926DL-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Dual N-Channel 60V MOSFET
Subcategory: N-Channel

SI1926DL-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1926DL-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1926DL-T1-E3 Features

  • Dual N-Channel 60V MOSFET.
  • TrenchFET power MOSFET technology.
  • 1800V ESD protected.
  • SC-70-6 surface mount package.
  • Suitable for low power load switch.

SI1926DL-T1-E3 Applications

  • Load switching in portable electronics.
  • Level shifting for mixed-voltage interfaces.
  • Power management for battery-powered devices.
  • Signal routing in compact PCB designs.

SI1926DL-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

60V.

What package is the SI1926DL-T1-E3 available in?

SC-70-6 (SOT-363).

What is the operating temperature range?

-55°C to +150°C.

What is the gate threshold voltage?

Maximum 2.5V at 250µA drain current.

What is the on-resistance of the MOSFET?

1.4 Ohm at Vgs=10V, 0.25 Ohm at Vgs=4.5V.

Is the device ESD protected?

Yes, up to 1800V.

What is the continuous drain current rating?

0.37A at 25°C case temperature, derated to 0.30A at 70°C case.

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