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SI1926DL The Vishay Siliconix SI1926DL is a dual N-channel MOSFET designed for low power load switching. It offers 60V drain-source voltage and ESD protection.
Mfr Part #:

SI1926DL

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Siliconix SI1926DL is a dual N-channel MOSFET designed for low power load switching. It offers 60V drain-source voltage and ESD protection.
✓ Total Stock: 168,972 pcs
$ Price Range: $2.81

SI1926DL Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
168,972 pcs
On Request
168972 pcs On Request 1 On Request On Request On Request On Request On Request
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SI1926DL Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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ESD Protection
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SI1926DL Description

Short technical summary and product information.

The Vishay Siliconix SI1926DL is a dual N-channel power MOSFET featuring TrenchFET technology for enhanced performance. It is rated for a drain-source voltage of 60V and includes ESD protection up to 1800V.

 

Key electrical characteristics include a maximum Rds(on) of 1.4Ω at VGS = 10V and 0.47Ω at VGS = 4.5V. The continuous drain current is rated at 0.37A at 25°C case temperature.

 

This MOSFET is available in a SOT-363 (SC-70 Dual) package, suitable for surface mounting. It operates within a junction temperature range of -55°C to +150°C.

 

The SI1926DL is suitable for applications such as low power load switching.

SI1926DL Quick Information

Product Type: MOSFET
Series: Si1926
Canonical Name: Dual N-Channel 60 V MOSFET
Subcategory: N-Channel

SI1926DL Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1926DL Estimated Pricing

Qty Low High
1+ $2.81 $2.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1926DL Features

  • Dual N-Channel TrenchFET power MOSFET.
  • 60V Drain-Source Voltage rating.
  • 1.4Ω maximum Rds(on) at VGS = 10V.
  • ESD protected up to 1800V.
  • SOT-363 (SC-70 Dual) package.

SI1926DL Applications

  • Suitable for low-current load switching circuits.
  • Ideal for battery-powered portable electronics.
  • Used in compact gate driver circuits.
  • Good for signal switching in space-limited modules.

SI1926DL FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the SI1926DL?

The drain-source breakdown voltage is a minimum of 60 V at VGS = 0 V and ID = 250 μA.

What is the package type of the SI1926DL?

The SI1926DL is available in a SOT-363 (SC-70 Dual, 6 leads) surface-mount package.

What is the operating temperature range of the SI1926DL?

The junction and storage temperature range is -55 °C to +150 °C.

What is the maximum continuous drain current at 25 °C case temperature?

The maximum continuous drain current is 0.37 A at TC = 25 °C.

What is the maximum drain-source on-resistance at VGS = 4.5 V?

The maximum drain-source on-resistance is 0.47 Ω at VGS = 4.5 V.

What is the maximum power dissipation at 25 °C case temperature?

The maximum power dissipation is 0.51 W at TC = 25 °C.

What is the gate-source voltage rating?

The gate-source voltage is rated at ±20 V.

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