| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
289,020 pcs
|
289020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,476 pcs
|
1476 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request | |
|
1,407 pcs
|
1407 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI1922EDH-T1-GE3 is a dual N-Channel MOSFET designed for surface mount applications. It offers a drain-source breakdown voltage of 20V and a continuous drain current of 1.3A. The MOSFET has a maximum on-resistance of 198mOhm at a drain current of 1A and gate-source voltage of 4.5V. It also features a logic level gate, making it suitable for low-voltage applications.
The device operates within a temperature range of -55°C to 150°C and has a power dissipation of 1.25W. It is packaged in a 6-TSSOP, SC-88, SOT-363 (SC-70-6) package, suitable for automated assembly processes.
Key electrical characteristics include a gate charge of 2.5nC maximum at 8V and a gate threshold voltage of 1V maximum at 250µA. This MOSFET is designed for general-purpose switching and amplification tasks in various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
1.3A.
198mOhm maximum at 1A.
-55°C to 150°C.
SOT-363 (SC-70-6).
2.5nC maximum at 8V.
Dual N-channel.