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301,000 pcs
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301000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale SI1917EDH-T1-GE3 is a P-Channel MOSFET suitable for general-purpose small signal applications. This component features a maximum drain current of 1A and an operating voltage of 12V. The maximum drain-source on-resistance is specified at 0.37 ohm.
This MOSFET utilizes silicon as its element material and has a metal-oxide FET technology. It is configured with two separate elements, each with a built-in diode. The component comes in a rectangular package with gull wing terminal form and pure matte tin terminal finish.
The device is constructed with a plastic/epoxy package body material. It is compliant with RoHS3 standards and has a Moisture Sensitivity Level (MSL) of 1, indicating unlimited usability under standard conditions. The REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain current (ID) for the SI1917EDH-T1-GE3 is 1A.
The maximum drain-source on-resistance for the SI1917EDH-T1-GE3 is 0.37 ohm.
The SI1917EDH-T1-GE3 MOSFET has an operating voltage of 12V.
The SI1917EDH-T1-GE3 is a general purpose small signal P-Channel MOSFET.
The SI1917EDH-T1-GE3 comes in a rectangular package with gull wing terminal form.
The SI1917EDH-T1-GE3 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the SI1917EDH-T1-GE3 is 1 Unlimited.