SI1917EDH-T1-E3 The Vishay Dale SI1917EDH-T1-E3 is a dual P-channel MOSFET designed for surface mount applications. It features a 12V drain-source voltage and a 1A current rating.
Mfr Part #:

SI1917EDH-T1-E3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1917EDH-T1-E3 is a dual P-channel MOSFET designed for surface mount applications. It features a 12V drain-source voltage and a 1A current rating.
✓ Total Stock: 230,361 pcs
$ Price Range: $0.99

SI1917EDH-T1-E3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
226,000 pcs
226000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
4,361 pcs
4361 pcs On Request 1 On Request On Request 1431+ On Request On Request

SI1917EDH-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI1917EDH-T1-E3 Description

Short technical summary and product information.

This Vishay Dale SI1917EDH-T1-E3 is a dual P-channel MOSFET with a Metal Oxide Semiconductor (MOSFET) technology. It is designed for surface mount applications and comes in a compact SC-70-6 package.

 

The MOSFET operates with a maximum drain-to-source voltage (Vdss) of 12V and can handle a continuous current of 1A. Its on-resistance (Rds On) is rated at a maximum of 370mOhm at 1A and 4.5V gate-source voltage. The gate charge (Qg) is a maximum of 2nC at 4.5V, and the gate threshold voltage (Vgs(th)) is a maximum of 450mV at 100µA.

 

With a power dissipation of 570mW, this component is suitable for various electronic circuits. It features a logic level gate, making it compatible with lower voltage control signals. The operating temperature range is from -55°C to 150°C (TJ).

 

The device is configured as two P-channel MOSFETs, making it a dual configuration. The mounting type is surface mount, and the package is specified as SC-70-6, also referred to as 6-TSSOP, SC-88, or SOT-363.

SI1917EDH-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI1917EDH-T1-E3 Dual P-Channel MOSFET
Subcategory: Arrays

SI1917EDH-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1917EDH-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1917EDH-T1-E3 Features

  • Dual P-channel MOSFET configuration.
  • 12V drain-to-source voltage rating.
  • 1A continuous current capability.
  • Low 370mOhm on-resistance.
  • Logic level gate for control flexibility.

SI1917EDH-T1-E3 Applications

  • Suitable for power switching circuits.
  • Ideal for battery-powered devices.
  • Used in low-voltage control applications.
  • Compact SC-70-6 package for space saving.

SI1917EDH-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the SI1917EDH-T1-E3?

12V.

What package options are available for this device?

SC-70-6, 6-TSSOP, SC-88, SOT-363 (all surface mount).

What is the operating temperature range for the SI1917EDH-T1-E3?

-55°C to 150°C (junction).

What is the maximum continuous drain current?

1A.

What is the typical gate threshold voltage?

Maximum 450mV at 100µA drain current.

Is this MOSFET compatible with low-voltage logic?

Yes, it features a logic-level gate.

What is the power dissipation rating?

570mW.

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