SI1913EDH-T1-E3 The Vishay Dale SI1913EDH-T1-E3 is a dual P-channel MOSFET featuring 20V drain-source voltage and 880mA continuous drain current. It is supplied in a surface-mount SC-70-6 package.
Mfr Part #:

SI1913EDH-T1-E3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1913EDH-T1-E3 is a dual P-channel MOSFET featuring 20V drain-source voltage and 880mA continuous drain current. It is supplied in a surface-mount SC-70-6 package.
✓ Total Stock: 316,802 pcs
$ Price Range: $0.99

SI1913EDH-T1-E3 Available from 3 distributors

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311,724 pcs
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2,539 pcs
2539 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,539 pcs
2539 pcs On Request 1 On Request On Request On Request On Request On Request

SI1913EDH-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI1913EDH-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI1913EDH-T1-E3 is a dual P-channel MOSFET designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 20V and a continuous drain current of 880mA. The on-resistance (Rds On) is specified as a maximum of 490mOhm at 880mA and 4.5V gate-source voltage.

 

This MOSFET operates within a temperature range of -55°C to 150°C. It features a logic level gate, making it suitable for low-voltage applications. The component is housed in a compact SC-70-6 surface-mount package, also known as 6-TSSOP, SC-88, or SOT-363, with a power dissipation rating of 570mW.

 

The device is classified under the MOSFET technology and is configured as two P-channel transistors. Its gate charge (Qg) is a maximum of 1.8nC at 4.5V, and the gate threshold voltage (Vgs(th)) is a maximum of 450mV at 100µA. The SI1913EDH-T1-E3 is RoHS3 compliant.

SI1913EDH-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI1913EDH-T1-E3 Dual P-Channel MOSFET
Subcategory: Arrays

SI1913EDH-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1913EDH-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1913EDH-T1-E3 Features

  • Dual P-channel MOSFET configuration.
  • 20V drain-source voltage rating.
  • 880mA continuous drain current.
  • Low on-resistance of 490mOhm.
  • Surface-mount SC-70-6 package.

SI1913EDH-T1-E3 Applications

  • Suitable for low-voltage switching.
  • Ideal for power management circuits.
  • Used in battery-powered devices.
  • General purpose MOSFET applications.

SI1913EDH-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SI1913EDH-T1-E3?

The maximum drain-to-source voltage (Vdss) is 20V.

What is the continuous drain current rating?

The maximum continuous drain current is 880mA.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 490mOhm at 880mA drain current and 4.5V gate-source voltage.

What package does the SI1913EDH-T1-E3 come in?

It is offered in an SC-70-6 surface-mount package (also known as 6-TSSOP, SC-88, SOT-363).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Does this MOSFET have logic-level gate drive?

Yes, it features a logic-level gate with a maximum gate threshold voltage of 450mV at 100µA drain current.

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