| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
750 pcs
|
750 pcs | On Request | 1 | On Request | On Request | 2014+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI1912EDH-T1-E3 is a dual N-channel MOSFET with a drain-to-source voltage (Vdss) of 20V and a continuous current rating of 1.13A. It features a low on-resistance (Rds On) of 280mOhm at 1.13A and 4.5V Vgs, and a gate charge (Qg) of 1nC at 4.5V. The gate threshold voltage (Vgs(th)) is a maximum of 450mV at 100µA, indicating it is a logic-level gate MOSFET.
The device is packaged in a compact SC-70-6 (SOT-363) surface mount package, making it suitable for space-constrained designs. It operates within a temperature range of -55°C to 150°C (TJ) and has a power dissipation of 570mW. The RoHS status is compliant, and the Moisture Sensitivity Level (MSL) is 1.
This MOSFET array is designed for various switching and amplification applications where space and performance are critical. Its dual-channel configuration allows for efficient implementation in half-bridge or full-bridge circuits, or for driving two separate loads.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
SC-70-6 surface mount package.
-55°C to 150°C.
1.13A.
280mOhm at 1.13A and 4.5V gate drive.
1nC at 4.5V.
450mV at 100µA.