| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
806 pcs
|
806 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| FET Feature | |
| FET Type | |
| Failure Rate | |
| Gate Charge | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel |
The SI1902DL-T1-E3 from Vishay Siliconix is a dual N-channel MOSFET array belonging to the TrenchFET® series. This component is designed for surface mount applications and comes in an SC-70-6 package.
Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 660mA at 25°C. The on-resistance (Rds On) is specified at a maximum of 385mOhm at 660mA and 4.5V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 1.5V at 250µA, and the gate charge (Qg) is a maximum of 1.2nC at 4.5V. The maximum power dissipation is 270mW.
This MOSFET array operates within a temperature range of -55°C to 150°C. It features a logic-level gate, making it suitable for various power management and switching applications where efficient control is required.
The SI1902DL-T1-E3 is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1. It is supplied in tape and reel or cut tape packaging.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the SI1902DL-T1-E3 is 20V.
The continuous drain current (Id) at 25°C for the SI1902DL-T1-E3 is 660mA.
The maximum on-resistance (Rds On) for the SI1902DL-T1-E3 is 385mOhm at 660mA and 4.5V Vgs.
The operating temperature range for the SI1902DL-T1-E3 is -55°C to 150°C.
The SI1902DL-T1-E3 is supplied in an SC-70-6 package, available in tape & reel or cut tape.