| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
516,571 pcs
|
516571 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
717 pcs
|
717 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
446 pcs
|
446 pcs | On Request | 1 | On Request | On Request | 1102 | On Request | On Request | |
|
56 pcs
|
56 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI1902DL-T1-E3 is a dual N-channel MOSFET belonging to the TrenchFET® power MOSFET family. It is rated for a drain-source voltage (Vdss) of 20V and can handle a continuous drain current (Id) of up to 660mA at 25°C. The device offers a low on-state resistance (Rds On) of 385mOhm at a gate-source voltage (Vgs) of 4.5V and 660mA.
This MOSFET is designed with logic level gate functionality, making it suitable for lower voltage drive applications. It operates within a wide temperature range of -55°C to +150°C (TJ). The device is packaged in a compact SC-70-6 surface mount package, also known as SOT-363 or SC-88, making it ideal for space-constrained designs.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 1.5V maximum at 250µA and a gate charge (Qg) of 1.2nC maximum at 4.5V. The maximum power dissipation is rated at 270mW at 25°C. The device is suitable for various power management and switching applications where space and efficiency are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) for the SI1902DL-T1-E3 is 20V.
The continuous drain current (Id) at 25°C for the SI1902DL-T1-E3 is 660mA.
The maximum on-state resistance (Rds On) is 385mOhm at 660mA and 4.5V Vgs.
The operating junction and storage temperature range is -55°C to +150°C.
The SI1902DL-T1-E3 is supplied in an SC-70-6 surface mount package.
The SI1902DL-T1-E3 is RoHS3 Compliant.