| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
565,000 pcs
|
565000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The Vishay SI1902CDL-T1-GE3 is a dual N-Channel MOSFET designed for various electronic applications. It features a drain-source breakdown voltage of 20V and a continuous drain current of 1.1A. The gate-source threshold voltage is 600mV, and the gate-source voltage is rated at 4.5V.
This MOSFET operates within a temperature range of -55°C to +150°C and has a power dissipation of 420mW. Key electrical characteristics include a drain-source on-resistance of 235mOhms, a gate charge of 2nC, and a minimum forward transconductance of 3Ms. Switching characteristics include a fall time of 10ns, a rise time of 13ns, a typical turn-off delay of 13ns, and a typical turn-on delay of 6ns.
The device is manufactured using Silicon (Si) technology and belongs to the Trenchfet tradename and Si1 series. It is configured as a dual transistor type. The mounting style is SMD/SMT, and it comes in a SOT-363-6 package, supplied on cut tape with a factory pack quantity of 3000 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20 V.
1.1 A.
-55°C to +150°C.
SOT-363-6.
235 mOhms.
600 mV.
420 mW.