| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
250 pcs
|
250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
62 pcs
|
62 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The SI1900DL-T1-E3 is a dual N-Channel enhancement-mode MOSFET from Vishay Dale, designed for low-voltage, low-power switching applications. It features a drain-to-source voltage rating of 30V and a continuous drain current of 590mA at 25°C ambient. The device integrates two independent N-channel MOSFETs in a compact SC-70-6 (6-TSSOP, SC-88, SOT-363) surface-mount package.
With a maximum on-resistance of 0.48Ω at a 10V gate drive and 0.7Ω at 4.5V, this MOSFET is optimized for logic-level gate drive, allowing direct control from low-voltage microcontrollers or logic circuits. The low gate charge of 1.4nC at 10V enables efficient switching at higher frequencies. The operating junction temperature range is -55°C to 150°C, and the maximum power dissipation is 270mW at 25°C.
Typical applications include load switching, power management in portable devices, battery protection, and DC/DC converter circuits. The dual configuration saves board space by replacing two discrete MOSFETs. The device is halogen-free and designed for surface-mount assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V
SC-70-6 (also known as 6-TSSOP, SC-88, SOT-363)
-55°C to 150°C (junction temperature)
Yes, it is halogen-free.
1.4 nC at VGS = 10V
0.48Ω at VGS = 10V, ID = 0.59A
Two independent N-channel MOSFETs.