SI1563DH-T1-E3 The SI1563DH-T1-E3 is an N/P-Channel MOSFET from Vishay Dale with a 20V drain-source breakdown voltage and 1.13A continuous drain current. It features a surface mountable SC-70-6 package.
Mfr Part #:

SI1563DH-T1-E3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The SI1563DH-T1-E3 is an N/P-Channel MOSFET from Vishay Dale with a 20V drain-source breakdown voltage and 1.13A continuous drain current. It features a surface mountable SC-70-6 package.
✓ Total Stock: 51,310 pcs
$ Price Range: $0.99

SI1563DH-T1-E3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
50,800 pcs
50800 pcs On Request 1 On Request On Request 14+ On Request On Request
Non-Authorised Inventory information
465 pcs
465 pcs On Request 1 On Request On Request 2009 On Request On Request
Non-Authorised Inventory information
45 pcs
45 pcs On Request 1 On Request On Request On Request On Request On Request

SI1563DH-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Brand
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Mounting Style
Mounting Type
Operating Temperature
Power
Power Dissipation
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

SI1563DH-T1-E3 Description

Short technical summary and product information.

The SI1563DH-T1-E3 is a versatile N/P-Channel MOSFET manufactured by Vishay Dale. It offers a drain-source breakdown voltage of 20V and a continuous drain current of 1.13A. The Rds On is specified at a maximum of 280mOhm at 1.13A and 4.5V gate-source voltage.

 

This MOSFET operates within a temperature range of -55°C to 150°C. It is designed with a logic level gate and features a Trenchfet technology. The component is housed in a compact SC-70-6 (SOT-363) package, suitable for surface mounting.

 

Key electrical characteristics include a gate charge of 2nC at 4.5V and a gate-source breakdown voltage of 8V. The power dissipation is rated at 570mW. The part is configured for complementary operation and is available on a reel for automated assembly processes.

SI1563DH-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: SI1563DH-T1-E3 N/P-Channel MOSFET
Subcategory: N/P-Channel

SI1563DH-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1563DH-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1563DH-T1-E3 Features

  • N/P-Channel MOSFET with 20V breakdown voltage.
  • Continuous drain current of 1.13A.
  • Low Rds On of 280mOhm at 1.13A, 4.5V.
  • Surface mount SC-70-6 package.
  • Operates from -55°C to 150°C.

SI1563DH-T1-E3 Applications

  • Suitable for power switching circuits.
  • Ideal for battery-powered devices.
  • Used in portable electronic equipment.
  • Applicable in low-voltage power management.

SI1563DH-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SI1563DH-T1-E3?

The drain-source breakdown voltage is 20V.

What is the continuous drain current of the SI1563DH-T1-E3 MOSFET?

The continuous drain current is 1.13A.

What is the Rds On for the SI1563DH-T1-E3 at specified conditions?

The Rds On is a maximum of 280mOhm at 1.13A and 4.5V.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

What package type is the SI1563DH-T1-E3 supplied in?

It is supplied in a 6-TSSOP, SC-88, SOT-363 package.

What is the RoHS status of the SI1563DH-T1-E3?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1 Unlimited.

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