SI1555DL-T1-E3 The Vishay Dale SI1555DL-T1-E3 is a MOSFET array with N and P-channel configurations. It features a surface mount package and operates within a temperature range of -55°C to 150°C.
Mfr Part #:

SI1555DL-T1-E3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1555DL-T1-E3 is a MOSFET array with N and P-channel configurations. It features a surface mount package and operates within a temperature range of -55°C to 150°C.
✓ Total Stock: 2,534 pcs
$ Price Range: $0.99

SI1555DL-T1-E3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,267 pcs
1267 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,267 pcs
1267 pcs On Request 1 On Request On Request On Request On Request On Request

SI1555DL-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id

SI1555DL-T1-E3 Description

Short technical summary and product information.

The SI1555DL-T1-E3 from Vishay Dale is a MOSFET array designed for various electronic applications. This component features both N-channel and P-channel MOSFETs, offering flexibility in circuit design.

 

Key electrical characteristics include a Drain to Source Voltage (Vdss) of 20V for N-channel and 8V for P-channel, with a maximum On-Resistance of 385mOhm at specified current and gate-source voltage. The gate charge is typically 1.2nC, and the gate threshold voltage is 1.4V.

 

This device is housed in a compact SC-70-6 surface mount package, suitable for space-constrained designs. It operates reliably across a wide temperature range from -55°C to 150°C (TJ).

 

The SI1555DL-T1-E3 is designed with a Logic Level Gate feature, enhancing its compatibility with lower voltage control signals. Its power dissipation is rated at 270mW.

SI1555DL-T1-E3 Quick Information

Product Type: MOSFET Array
Canonical Name: SI1555DL-T1-E3
Subcategory: Transistors - FETs, MOSFETs - Arrays

SI1555DL-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI1555DL-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1555DL-T1-E3 Features

  • N and P-Channel MOSFET array.
  • Logic Level Gate compatible.
  • Surface Mount SC-70-6 package.
  • Wide operating temperature range.
  • Low On-Resistance.

SI1555DL-T1-E3 Applications

  • Ideal for power switching.
  • Suitable for battery management.
  • Used in portable electronics.
  • General purpose switching applications.

SI1555DL-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain to source voltage of the SI1555DL-T1-E3?

The N-channel has a maximum drain to source voltage of 20V, and the P-channel has a maximum of 8V.

What is the continuous drain current rating?

The N-channel is rated for 660mA continuous drain current, and the P-channel for 570mA.

What is the on-resistance of the SI1555DL-T1-E3?

The maximum on-resistance is 385mOhm at 660mA drain current and 4.5V gate drive.

What is the operating temperature range?

The junction operating temperature range is -55°C to 150°C.

What package is the SI1555DL-T1-E3 available in?

It is available in an SC-70-6 surface mount package.

Does the SI1555DL-T1-E3 have a logic level gate?

Yes, it features a logic level gate with a maximum gate threshold voltage of 1.4V at 250µA.

What is the power dissipation rating?

The maximum power dissipation is 270mW.

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