| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,743 pcs
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5743 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
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| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Intertechnology SI1551DL-T1-E3 is an N+P Channel MOSFET designed for various applications. It features a drain-source breakdown voltage of 20V and a continuous drain current of 290mA. The on-state drain-source resistance is specified at a maximum of 1.9 Ohms at 290mA and 4.5V.
This MOSFET operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a gate charge of 1.5nC at 4.5V and a gate-source threshold voltage of 1.5V at 250µA. The maximum power dissipation is rated at 270mW.
The device is packaged in a SC-70-6 surface-mount package, suitable for compact electronic designs. It is also identified as a Logic Level Gate FET, indicating its suitability for low-voltage logic applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 20V.
The maximum continuous drain current is 290mA.
The maximum on-state resistance is 1.9Ω at 290mA and 4.5V gate drive.
The operating temperature range is -55°C to 150°C.
It is available in an SC-70-6 surface-mount package.
The maximum gate charge is 1.5nC at 4.5V.
The maximum power dissipation is 270mW.