| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,820 pcs
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8820 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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| Tape & Reel |
The Vishay Intertechnology SI1551DL-T1 is an N+P Channel MOSFET designed for various electronic applications. It offers a drain-source breakdown voltage of 20V and a continuous drain current of 290mA. The on-state drain-source resistance is rated at 1.9Ω, with a typical gate-source threshold voltage of 1.5V.
This MOSFET operates within a temperature range of -55°C to 150°C. It features a maximum power dissipation of 300mW and a gate charge of 300nC. The device is suitable for industrial applications and is mounted using the SMD (Surface Mount Device) method.
The SI1551DL-T1 comes in an SC-70-6 package and is available in tape and reel packaging, facilitating automated assembly processes. Its N+P Channel configuration makes it a versatile component for power management and switching circuits.
The drain-source breakdown voltage is 20V.
The continuous drain current is 290mA.
The on-state drain-source resistance is 1.9Ω.
The gate-source threshold voltage is 1.5V.
The maximum power dissipation is 300mW.
The operating temperature range is -55°C to 150°C.
This is an N+P Channel MOSFET.