SI1539CDL-T1-GE3 The Vishay SI1539CDL-T1-GE3 is an N- and P-channel MOSFET with a 30V drain-source voltage rating. It is designed for applications like DC/DC converters and load switching.
Mfr Part #:

SI1539CDL-T1-GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay SI1539CDL-T1-GE3 is an N- and P-channel MOSFET with a 30V drain-source voltage rating. It is designed for applications like DC/DC converters and load switching.
✓ Total Stock: 627,708 pcs
$ Price Range: $0.99

SI1539CDL-T1-GE3 Available from 4 distributors

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SI1539CDL-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI1539CDL-T1-GE3 Description

Short technical summary and product information.

The Vishay SI1539CDL-T1-GE3 is a TrenchFET power MOSFET featuring both N-channel and P-channel configurations in a single package. It offers a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 0.7A for the N-channel and -0.5A for the P-channel.

 

Key electrical characteristics include a low on-resistance (Rds(on)) of 388mOhm at 600mA and 10V, and a gate charge (Qg) of 1.5nC at 10V. The device operates within a temperature range of -55°C to 150°C.

 

This MOSFET is housed in a compact SC-70-6 (SOT-363) surface-mount package, making it suitable for space-constrained designs. Its dual-channel configuration and logic-level gate capability make it versatile for various power management applications, including DC/DC converters and load switching circuits.

SI1539CDL-T1-GE3 Quick Information

Product Type: MOSFET
Series: Si1
Canonical Name: Vishay Siliconix SI1539CDL N- and P-Channel 30V MOSFET
Subcategory: N- and P-Channel

SI1539CDL-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1539CDL-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1539CDL-T1-GE3 Features

  • Dual N- and P-channel MOSFET configuration.
  • 30V drain-source breakdown voltage.
  • Low Rds(on) of 388mOhm at 10V Vgs.
  • Compact SC-70-6 (SOT-363) surface-mount package.
  • TrenchFET power MOSFET technology.

SI1539CDL-T1-GE3 Applications

  • Ideal for DC/DC converter circuits.
  • Suitable for load switch applications.
  • Used in portable electronic devices.
  • Power management solutions.

SI1539CDL-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SI1539CDL-T1-GE3?

The drain-source breakdown voltage is 30V for the N-channel and -30V for the P-channel.

What is the typical on-resistance of the SI1539CDL-T1-GE3?

The typical on-resistance is 388mOhm at a drain current of 600mA and gate-source voltage of 10V.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI1539CDL-T1-GE3 in?

It is supplied in the SC-70-6 (SOT-363) package.

Is the SI1539CDL-T1-GE3 RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

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