| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
33 pcs
|
33 pcs | On Request | 1 | On Request | On Request | 11+P/ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The SI1501DL-T1-E3 from Vishay Dale is a discrete semiconductor component featuring N and P-Channel MOSFET technology. It is designed for applications requiring a 30V drain-to-source voltage.
Key electrical characteristics include a maximum power dissipation of 270mW and a maximum Rds On of 480 mOhm at 590mA and 10V. The gate threshold voltage is a maximum of 2.6V at 250µA, and the gate charge is 1.4nC at 10V.
This MOSFET operates within a temperature range of -55°C to 150°C. It is packaged in a compact SC70-6 (SOT-363) surface-mount case, suitable for space-constrained designs. The component is RoHS3 compliant and has a Moisture Sensitivity Level of 1 (Unlimited).
This device is ideal for general-purpose switching applications where both N-channel and P-channel MOSFETs are needed in a single package.
The drain-source voltage (Vdss) for the SI1501DL-T1-E3 is 30V.
The maximum power dissipation for the SI1501DL-T1-E3 is 270mW.
The operating temperature range for the SI1501DL-T1-E3 is -55°C to 150°C.
The SI1501DL-T1-E3 is supplied in a SC70-6 (SOT-363) surface-mount package.
Yes, the SI1501DL-T1-E3 is RoHS3 Compliant.