SI1501DL-T1-E3 The Vishay Dale SI1501DL-T1-E3 is an N and P-Channel MOSFET with a 30V drain-source voltage and 270mW maximum power dissipation. It is supplied in a surface-mount SC70-6 package.
Mfr Part #:

SI1501DL-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1501DL-T1-E3 is an N and P-Channel MOSFET with a 30V drain-source voltage and 270mW maximum power dissipation. It is supplied in a surface-mount SC70-6 package.
✓ Total Stock: 33 pcs

SI1501DL-T1-E3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
33 pcs
33 pcs On Request 1 On Request On Request 11+P/ On Request On Request

SI1501DL-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
SVHC Present

SI1501DL-T1-E3 Description

Short technical summary and product information.

The SI1501DL-T1-E3 from Vishay Dale is a discrete semiconductor component featuring N and P-Channel MOSFET technology. It is designed for applications requiring a 30V drain-to-source voltage.

 

Key electrical characteristics include a maximum power dissipation of 270mW and a maximum Rds On of 480 mOhm at 590mA and 10V. The gate threshold voltage is a maximum of 2.6V at 250µA, and the gate charge is 1.4nC at 10V.

 

This MOSFET operates within a temperature range of -55°C to 150°C. It is packaged in a compact SC70-6 (SOT-363) surface-mount case, suitable for space-constrained designs. The component is RoHS3 compliant and has a Moisture Sensitivity Level of 1 (Unlimited).

 

This device is ideal for general-purpose switching applications where both N-channel and P-channel MOSFETs are needed in a single package.

SI1501DL-T1-E3 Quick Information

Product Type: MOSFET
Series: TrenchFET®
Canonical Name: Vishay Dale SI1501DL-T1-E3 N and P-Channel MOSFET
Subcategory: N and P-Channel

SI1501DL-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

SI1501DL-T1-E3 Features

  • N and P-Channel MOSFET array.
  • 30V maximum drain-source voltage.
  • 270mW maximum power dissipation.
  • Logic Level Gate feature.
  • Surface mount SC70-6 package.

SI1501DL-T1-E3 Applications

  • Suitable for general switching applications.
  • Ideal for space-constrained designs.
  • Used in battery management circuits.
  • Applicable for load switching tasks.

SI1501DL-T1-E3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI1501DL-T1-E3?

The drain-source voltage (Vdss) for the SI1501DL-T1-E3 is 30V.

What is the maximum power dissipation of the SI1501DL-T1-E3?

The maximum power dissipation for the SI1501DL-T1-E3 is 270mW.

What is the operating temperature range for this MOSFET?

The operating temperature range for the SI1501DL-T1-E3 is -55°C to 150°C.

What package type is the SI1501DL-T1-E3 supplied in?

The SI1501DL-T1-E3 is supplied in a SC70-6 (SOT-363) surface-mount package.

Is the SI1501DL-T1-E3 RoHS compliant?

Yes, the SI1501DL-T1-E3 is RoHS3 Compliant.

SI1501DL-T1-E3 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
BC847B/215
BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
View Part
S1ME361T
S1ME361T
Vishay
The Vishay S1ME361T is a rectifier with an average rectified current of 1A and a maximum reverse voltage of 1000V. It is supplied in an SMA package.
View Part
CD4023BM96/CD4023BM96
CD4023BM96/CD4023BM96
Texas Instruments
The Texas Instruments CD4023BM96 is a logic gate designed for digital applications. It features RoHS3 compliance and an MSL 1 rating.
View Part
TEST105
TEST105
Texas Instruments
The TEST105 from Texas Instruments is a component with RoHS3 Compliant, MSL 1 Unlimited, and REACH Unaffected status.
View Part
Home

Categories