| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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18,000 pcs
|
18000 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
|
2,710 pcs
|
2710 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
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| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI1489EDH-T1-GE3 is a P-Channel TrenchFET Power MOSFET designed for load switching applications in portable devices such as cellular phones, DSCs, and tablet PCs. It features a maximum drain-source voltage (Vds) of 8V and a maximum continuous drain current (Id) of 2A at 25°C case temperature.
This MOSFET offers a low on-resistance (Rds(on)) of 48mOhm at 3A and 4.5V Vgs, contributing to efficient power management. The device operates over a wide temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 2.8W at 25°C case temperature.
Packaged in a compact SOT-363 (SC-70-6) surface-mount case, the SI1489EDH-T1-GE3 is suitable for space-constrained designs. It is compliant with RoHS Directive 2002/95/EC and is halogen-free according to IEC 61249-2-21 definition.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the SI1489EDH-T1-GE3 is 8V.
The continuous drain current (Id) is rated at 2A (Tc = 25°C).
The on-resistance (Rds(on)) is a maximum of 48mOhm at 3A and 4.5V Vgs.
This MOSFET is supplied in a SOT-363 package, also referred to as SC-70-6.
The operating junction and storage temperature range is -55°C to 150°C.
Yes, the RoHS status is RoHS3 Compliant.
Yes, it is halogen-free according to IEC 61249-2-21 definition.