SI1489EDH-T1-GE3 The Vishay Dale SI1489EDH-T1-GE3 is a P-Channel MOSFET with 8V drain-source voltage and 2A continuous drain current. It is supplied in a SOT-363 package.
Mfr Part #:

SI1489EDH-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1489EDH-T1-GE3 is a P-Channel MOSFET with 8V drain-source voltage and 2A continuous drain current. It is supplied in a SOT-363 package.
✓ Total Stock: 20,710 pcs
$ Price Range: $0.99

SI1489EDH-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
18,000 pcs
18000 pcs On Request 1 On Request On Request 14+ On Request On Request
Non-Authorised Inventory information
2,710 pcs
2710 pcs On Request 1 On Request On Request On Request On Request On Request

SI1489EDH-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI1489EDH-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI1489EDH-T1-GE3 is a P-Channel TrenchFET Power MOSFET designed for load switching applications in portable devices such as cellular phones, DSCs, and tablet PCs. It features a maximum drain-source voltage (Vds) of 8V and a maximum continuous drain current (Id) of 2A at 25°C case temperature.

 

This MOSFET offers a low on-resistance (Rds(on)) of 48mOhm at 3A and 4.5V Vgs, contributing to efficient power management. The device operates over a wide temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 2.8W at 25°C case temperature.

 

Packaged in a compact SOT-363 (SC-70-6) surface-mount case, the SI1489EDH-T1-GE3 is suitable for space-constrained designs. It is compliant with RoHS Directive 2002/95/EC and is halogen-free according to IEC 61249-2-21 definition.

SI1489EDH-T1-GE3 Quick Information

Product Type: MOSFET
Series: TrenchFET
Canonical Name: P-Channel 8V 2A MOSFET
Subcategory: Single

SI1489EDH-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1489EDH-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1489EDH-T1-GE3 Features

  • P-Channel TrenchFET Power MOSFET.
  • 8V Drain-Source Voltage.
  • 2A Continuous Drain Current.
  • Low 48mOhm Rds(on) at 3A.
  • Compact SOT-363 package.

SI1489EDH-T1-GE3 Applications

  • Ideal for load switching.
  • Used in portable devices.
  • Suitable for cellular phones.
  • Applications include DSCs.
  • Designed for tablet PCs.

SI1489EDH-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI1489EDH-T1-GE3?

The maximum drain-source voltage (Vds) for the SI1489EDH-T1-GE3 is 8V.

What is the continuous drain current rating?

The continuous drain current (Id) is rated at 2A (Tc = 25°C).

What is the typical on-resistance of this MOSFET?

The on-resistance (Rds(on)) is a maximum of 48mOhm at 3A and 4.5V Vgs.

What package type is the SI1489EDH-T1-GE3 supplied in?

This MOSFET is supplied in a SOT-363 package, also referred to as SC-70-6.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

Is this component RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

Is this component halogen-free?

Yes, it is halogen-free according to IEC 61249-2-21 definition.

Home
Account

Categories