SI1469DH-T1-E3 The Vishay Dale SI1469DH-T1-E3 is a P-Channel MOSFET with a 20V drain-source voltage and a continuous drain current of 2.7A. It features a low Rds On of 80mOhm at 2A, 10V.
Mfr Part #:

SI1469DH-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1469DH-T1-E3 is a P-Channel MOSFET with a 20V drain-source voltage and a continuous drain current of 2.7A. It features a low Rds On of 80mOhm at 2A, 10V.
✓ Total Stock: 4,020 pcs
$ Price Range: $0.99

SI1469DH-T1-E3 Available from 1 distributor

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✓ Non-Authorised
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SI1469DH-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI1469DH-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI1469DH-T1-E3 is a P-Channel MOSFET designed for load switching in portable devices. It offers a drain-source voltage of 20V and a continuous drain current capability of 2.7A at 25°C case temperature.

 

Key electrical characteristics include a low on-state resistance (Rds On) of 80mOhm at a gate-source voltage of -10V and a drain current of -2A. The gate threshold voltage is a maximum of 1.5V at 250µA. Input capacitance is rated at 470pF at 10V, and gate charge is typically 8.5nC at 4.5V.

 

This MOSFET operates within a junction temperature range of -55°C to 150°C. It is housed in a compact SC-70-6 surface mount package, suitable for space-constrained applications. The maximum power dissipation is 1.5W when mounted on a standard FR4 board (Ta) and 2.78W at 25°C case temperature (Tc).

 

The device is compliant with RoHS Directive 2002/95/EC and is halogen-free according to IEC 61249-2-21 definition.

SI1469DH-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix Si1469DH P-Channel 20V MOSFET
Subcategory: P-Channel

SI1469DH-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1469DH-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1469DH-T1-E3 Features

  • P-Channel 20V MOSFET for load switching.
  • Low Rds On of 80mOhm at 2A, 10V.
  • Compact SC-70-6 surface mount package.
  • Wide operating temperature range.
  • RoHS3 compliant and halogen-free.

SI1469DH-T1-E3 Applications

  • Load switch for portable devices
  • Power management in battery-powered systems
  • DC/DC converter switching applications
  • P-channel power distribution circuits

SI1469DH-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SI1469DH-T1-E3?

The drain-source breakdown voltage is 20V.

What is the maximum gate-source voltage for this MOSFET?

The maximum gate-source voltage is ±12V.

What is the Rds On (Max) for the SI1469DH-T1-E3 at 2A, 10V?

The Rds On (Max) is 80mOhm at 2A, 10V.

What is the continuous drain current rating?

The continuous drain current is 2.7A at 25°C case temperature.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SI1469DH-T1-E3 supplied in?

It is supplied in a SC-70-6 package for surface mounting.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 Compliant.

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