SI1450DH-T1-E3 The Vishay Dale SI1450DH-T1-E3 is an N-Channel MOSFET with a drain-source voltage of 8V. It offers a continuous drain current of 4.53A at 25°C ambient temperature.
Mfr Part #:

SI1450DH-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1450DH-T1-E3 is an N-Channel MOSFET with a drain-source voltage of 8V. It offers a continuous drain current of 4.53A at 25°C ambient temperature.
✓ Total Stock: 100 pcs
$ Price Range: $0.99

SI1450DH-T1-E3 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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100 pcs
100 pcs On Request 1 On Request On Request 2014+ On Request On Request

SI1450DH-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI1450DH-T1-E3 Description

Short technical summary and product information.

This N-Channel MOSFET from Vishay Dale, part number SI1450DH-T1-E3, is designed for load switch applications in portable devices. It features a drain-source voltage (Vds) of 8V and a low on-state resistance, with a maximum of 47mOhm at 4A and 4.5V Vgs. The continuous drain current is rated at 4.53A at 25°C ambient temperature and 6.04A at 25°C case temperature.

 

The device operates within a temperature range of -55°C to 150°C (TJ) and is housed in a compact SC-70-6 (SOT-363) surface-mount package. Key electrical characteristics include a gate-source threshold voltage of 1V maximum and a gate charge of 7.05nC maximum at 5V Vgs. The MOSFET is also rated for 1.5V operation and is halogen-free.

 

Its small footprint and efficient performance make it suitable for space-constrained designs. The MOSFET technology employed is Metal Oxide Semiconductor Field-Effect Transistor (MOSFET).

 

Key specifications include a maximum power dissipation of 1.56W at 25°C ambient and 2.78W at 25°C case temperature. Input capacitance is 535pF maximum at 4V Vds.

SI1450DH-T1-E3 Quick Information

Product Type: MOSFET
Series: TrenchFET®
Canonical Name: N-Channel 8V MOSFET
Subcategory: N-Channel

SI1450DH-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1450DH-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1450DH-T1-E3 Features

  • N-Channel 8V MOSFET for load switching.
  • Low Rds On: 47mOhm at 4A/4.5V.
  • Guaranteed 1.5V operation.
  • Compact SC-70-6 surface-mount package.
  • Halogen-free and RoHS3 compliant.

SI1450DH-T1-E3 Applications

  • Ideal for portable device load switches.
  • Suitable for space-constrained designs.
  • Used in battery-powered electronics.
  • Efficient power management applications.

SI1450DH-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the SI1450DH-T1-E3?

The drain-source voltage (Vds) is 8V.

What is the maximum continuous drain current for the SI1450DH-T1-E3?

The maximum continuous drain current is 4.53A at 25°C ambient temperature and 6.04A at 25°C case temperature.

What is the Rds On for the SI1450DH-T1-E3?

The Rds On is a maximum of 47mOhm at 4A drain current and 4.5V gate-source voltage.

What is the operating temperature range of the SI1450DH-T1-E3?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SI1450DH-T1-E3 in?

It is in a 6-TSSOP, SC-88, SOT-363 package, specifically the SC-70-6 supplier device package.

Is the SI1450DH-T1-E3 RoHS compliant?

Yes, it is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL) for the SI1450DH-T1-E3?

The Moisture Sensitivity Level is 1.

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