SI1441EDH-T1-GE3 The Vishay SI1441EDH-T1-GE3 is a P-Channel MOSFET with a 20V Drain-Source Voltage and 4A Continuous Drain Current. It is supplied in a surface mount SC-70-6 package.
Mfr Part #:

SI1441EDH-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay SI1441EDH-T1-GE3 is a P-Channel MOSFET with a 20V Drain-Source Voltage and 4A Continuous Drain Current. It is supplied in a surface mount SC-70-6 package.
✓ Total Stock: 90,000 pcs
$ Price Range: $0.99

SI1441EDH-T1-GE3 Available from 1 distributor

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✓ Non-Authorised
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90,000 pcs
90000 pcs On Request 1 On Request On Request On Request On Request On Request

SI1441EDH-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI1441EDH-T1-GE3 Description

Short technical summary and product information.

The Vishay SI1441EDH-T1-GE3 is a P-Channel MOSFET designed for load switching applications in portable devices. It features a TrenchFET power MOSFET construction and offers a typical ESD performance of 1500V.

 

Key electrical characteristics include a Drain-Source Voltage (VDS) of 20V and a Continuous Drain Current (ID) of 4A at 25°C case temperature. The On-Resistance (RDS(on)) is specified at a maximum of 0.041 Ohms at VGS = -4.5V and 5A. The Gate Threshold Voltage (VGS(th)) is 1V at 250µA.

 

This MOSFET operates over a wide temperature range from -55°C to +150°C. It is packaged in a compact SC-70-6 (SOT-363) surface mount package, making it suitable for space-constrained designs. The device is lead (Pb)-free and halogen-free.

 

Applications include load switching for cellular phones, DSCs, portable game consoles, MP3 players, and GPS devices.

SI1441EDH-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: P-Channel 20V MOSFET
Subcategory: P-Channel

SI1441EDH-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI1441EDH-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1441EDH-T1-GE3 Features

  • P-Channel TrenchFET power MOSFET.
  • 20V Drain-Source Voltage rating.
  • 4A Continuous Drain Current capability.
  • Low On-Resistance: 0.041 Ohm max.
  • SC-70-6 surface mount package.

SI1441EDH-T1-GE3 Applications

  • Load switch for portable devices.
  • Suitable for cellular phones.
  • Used in DSC applications.
  • Ideal for portable game consoles.
  • Applicable for MP3 players.

SI1441EDH-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the Drain-Source Voltage for the SI1441EDH-T1-GE3?

The Drain-Source Voltage (VDS) for the SI1441EDH-T1-GE3 is 20V.

What is the maximum continuous drain current for this MOSFET?

The maximum continuous drain current (ID) is 4A at 25°C case temperature.

What is the typical On-Resistance of the SI1441EDH-T1-GE3?

The On-Resistance (RDS(on)) is a maximum of 0.041 Ohms at 5A and -4.5V VGS.

What is the operating temperature range for this device?

The operating junction and storage temperature range is -55°C to +150°C.

What package type is the SI1441EDH-T1-GE3 supplied in?

This MOSFET is supplied in the SC-70-6 (SOT-363) package for surface mounting.

Is the SI1441EDH-T1-GE3 RoHS compliant?

Yes, the SI1441EDH-T1-GE3 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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