SI1441EDH-T1-BE3 The Vishay Dale SI1441EDH-T1-BE3 is a P-Channel MOSFET designed for load switching in portable devices. It offers a 20V drain-source voltage and 4A continuous drain current.
Mfr Part #:

SI1441EDH-T1-BE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1441EDH-T1-BE3 is a P-Channel MOSFET designed for load switching in portable devices. It offers a 20V drain-source voltage and 4A continuous drain current.
✓ Total Stock: 5,000 pcs
$ Price Range: $0.99

SI1441EDH-T1-BE3 Available from 1 distributor

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✓ Non-Authorised
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5,000 pcs
5000 pcs On Request 1 On Request On Request 24+ On Request On Request

SI1441EDH-T1-BE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI1441EDH-T1-BE3 Description

Short technical summary and product information.

The Vishay Dale SI1441EDH-T1-BE3 is a P-Channel MOSFET featuring TrenchFET power MOSFET technology. It is designed for load switch applications in portable electronic devices such as cellular phones, DSCs, portable game consoles, MP3 players, and GPS units.

 

This MOSFET has a drain-source breakdown voltage of -20V and a continuous drain current rating of -4A. The Rds(on) is specified at a maximum of 0.041 Ohms at VGS = -4.5V. It operates over a temperature range of -55°C to +150°C.

 

The device is housed in a compact SC-70-6 (SOT-363) package, suitable for surface mounting. Its typical ESD performance is 1500V, and it is 100% Rgs tested. The material categorization indicates it is Lead (Pb)-free and halogen-free.

 

Key electrical characteristics include a gate-source voltage range of ±10V and a gate charge of 33 nC typical. The maximum power dissipation is 1.6W (Ta) or 2.8W (Tc).

SI1441EDH-T1-BE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI1441EDH-T1-BE3 P-Channel MOSFET
Subcategory: P-Channel

SI1441EDH-T1-BE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1441EDH-T1-BE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1441EDH-T1-BE3 Features

  • P-Channel TrenchFET power MOSFET.
  • 20V drain-source voltage rating.
  • 4A continuous drain current.
  • Low Rds(on) of 41mOhm max.
  • SC-70-6 surface mount package.

SI1441EDH-T1-BE3 Applications

  • Ideal for portable device load switches.
  • Suitable for cellular phones.
  • Used in digital still cameras.
  • Applicable to portable game consoles.
  • Designed for GPS modules.

SI1441EDH-T1-BE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

The drain-source breakdown voltage is -20V (minimum) and the drain to source voltage (Vdss) is 20V.

What package is the SI1441EDH-T1-BE3 available in?

It is available in a 6-TSSOP, SC-88, SOT-363 package with a supplier device package of SC-70-6.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +150°C.

What is the gate threshold voltage?

The maximum gate threshold voltage is 1V at ID=250µA.

What is the on-resistance?

The maximum on-resistance is 41mOhm at VGS=4.5V and ID=5A.

What is the typical gate charge?

The typical gate charge is 12.5nC.

What is the ESD performance?

The typical ESD performance is 1500V.

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