SI1427EDH-T1-GE3 The Vishay Dale SI1427EDH-T1-GE3 is a P-Channel MOSFET with a 20V drain-source voltage and 2A continuous current rating. It is supplied in a compact SC-70-6 package.
Mfr Part #:

SI1427EDH-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1427EDH-T1-GE3 is a P-Channel MOSFET with a 20V drain-source voltage and 2A continuous current rating. It is supplied in a compact SC-70-6 package.
✓ Total Stock: 3,200 pcs
$ Price Range: $0.99

SI1427EDH-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request 17+ On Request On Request
Non-Authorised Inventory information
200 pcs
200 pcs On Request 1 On Request On Request 17+ On Request On Request

SI1427EDH-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
ESD Protection
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI1427EDH-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI1427EDH-T1-GE3 is a P-Channel MOSFET designed for load switching in portable devices. It features a 20V drain-source voltage and a continuous drain current of up to 2A.

 

Key electrical characteristics include a low on-resistance of 64mOhm at 3A and 4.5V Vgs, and a gate charge of 7.6nC typical. The device operates within a temperature range of -55°C to 150°C.

 

This MOSFET is housed in a surface-mount SC-70-6 (SOT-363) package, making it suitable for space-constrained applications. It also includes built-in ESD protection with a typical performance of 2000V.

SI1427EDH-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: P-Channel 20V MOSFET
Subcategory: P-Channel

SI1427EDH-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1427EDH-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1427EDH-T1-GE3 Features

  • P-Channel 20V MOSFET
  • Low Rds On: 64mOhm at 3A, 4.5V
  • 2A Continuous Drain Current
  • Surface Mount SC-70-6 Package
  • Built-in 2000V ESD Protection

SI1427EDH-T1-GE3 Applications

  • Load switch for portable devices
  • Suitable for cellular phones
  • Used in DSC applications
  • Ideal for portable game consoles
  • Applicable for MP3 players

SI1427EDH-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SI1427EDH-T1-GE3?

The maximum drain-source voltage is -20V.

What is the continuous drain current rating?

The continuous drain current is -2A at case temperature 25°C.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

What package is the SI1427EDH-T1-GE3 available in?

It is available in an SC-70-6 (SOT-363) surface-mount package.

What is the gate threshold voltage?

The maximum gate threshold voltage is 1V at a drain current of 250µA.

What is the typical on-resistance at 4.5V gate drive?

The maximum on-resistance is 64mOhm at Vgs = -4.5V and Id = 3A.

What is the ESD protection level?

The typical ESD performance is 2000V.

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