| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
411 pcs
|
411 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type | |
| Tape & Reel |
The Vishay SI1424EDH-T1-GE3 is an N-Channel power MOSFET featuring TrenchFET technology. It is rated for a 20V drain-source voltage and offers low on-resistance values, as low as 0.033 Ohms at a 4.5V gate-source voltage. The continuous drain current is rated at 4A.
This MOSFET is suitable for applications such as load switches and battery switches in portable devices. It comes in a compact SC-70 (SOT-363) package, designed for surface mounting. The device also includes typical ESD protection of 4000V and is 100% R_g tested.
Key electrical characteristics include a maximum power dissipation of 2.8W at 25°C (TC) and thermal resistance ratings such as junction-to-ambient of 80°C/W maximum. The operating junction and storage temperature range is -55°C to +150°C.
The maximum drain-source voltage is 20V.
The typical maximum on-resistance at VGS = 4.5V is 0.033 Ohms.
The continuous drain current rating is 4A.
The SI1424EDH-T1-GE3 is supplied in an SC-70 package.
The operating junction and storage temperature range is -55°C to +150°C.
Yes, the SI1424EDH-T1-GE3 is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.