SI1424EDH-T1-GE3 N-Channel MOSFET with 20V drain-source voltage and 4A continuous drain current. Features 33mOhm on-resistance at 4.5V gate drive.
Mfr Part #:

SI1424EDH-T1-GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
N-Channel MOSFET with 20V drain-source voltage and 4A continuous drain current. Features 33mOhm on-resistance at 4.5V gate drive.
✓ Total Stock: 412,446 pcs
$ Price Range: $0.99

SI1424EDH-T1-GE3 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

SI1424EDH-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
ESD Protection
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI1424EDH-T1-GE3 Description

Short technical summary and product information.

The SI1424EDH-T1-GE3 is an N-Channel enhancement mode MOSFET from Vishay Dale, designed for low-voltage switching applications. It offers a maximum drain-source voltage of 20V and a continuous drain current of 4A, making it suitable for power management and load switching in compact designs.

 

Key electrical characteristics include a maximum on-resistance of 33mOhm at Vgs=4.5V and Id=5A, with low gate charge of 6nC typical for efficient switching. The device features a gate threshold voltage of 1V maximum at Id=250µA and includes 4000V ESD protection.

 

The MOSFET is housed in a SOT-363 surface-mount package, supporting a maximum power dissipation of 1.56W at ambient temperature and 2.8W at case temperature. It operates over a junction temperature range of -55°C to 150°C.

SI1424EDH-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: SI1424EDH-T1-GE3 N-Channel MOSFET
Subcategory: Single MOSFETs

SI1424EDH-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1424EDH-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1424EDH-T1-GE3 Features

  • N-Channel MOSFET with 20V drain-source voltage.
  • 4A continuous drain current rating.
  • 33mOhm on-resistance at 4.5V gate drive.
  • 4000V ESD protection included.
  • SOT-363 surface-mount package.

SI1424EDH-T1-GE3 Applications

  • Used in low-voltage power management circuits.
  • Suitable for load switching applications.
  • Ideal for portable and battery-powered devices.

SI1424EDH-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the SI1424EDH-T1-GE3?

The maximum drain-source voltage is 20V.

What is the continuous drain current rating?

The continuous drain current is 4A at case temperature 25°C.

What is the on-resistance at 4.5V gate drive?

The maximum on-resistance is 33mOhm at Vgs=4.5V and Id=5A.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Does the device include ESD protection?

Yes, it includes typical 4000V ESD protection.

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