| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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55,020 pcs
|
55020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,415 pcs
|
5415 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
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| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI1416EDH-T1-GE3 is a TrenchFET power MOSFET designed for portable devices. It features a 30V drain-source voltage (VDS) and a continuous drain current (ID) of 3.9A at 25°C case temperature.
This N-Channel MOSFET offers low on-resistance, with a maximum of 58mOhm at 3.1A and 10V VGS. It also has a typical gate charge of 3.5 nC at 10V VGS. The device operates over a temperature range of -55°C to 150°C (TJ).
Packaged in a compact 6-TSSOP, SC-88, SOT-363 (SC-70-6) footprint, the SI1416EDH-T1-GE3 is suitable for surface mounting. Its typical ESD protection is 1500V in HBM. Applications include DC/DC converters, high-frequency switching, OVP switches, and load switches in portable electronics like smartphones and tablet PCs.
The MOSFET is RoHS and Halogen-free compliant. It has a maximum power dissipation of 2.8W at 25°C case temperature and a junction-to-ambient thermal resistance of 80°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V.
The maximum continuous drain current is 3.9A at 25°C case temperature.
The typical on-resistance is 58mOhm at 3.1A and 10V VGS.
The operating junction temperature range is -55°C to 150°C.
It is available in a 6-TSSOP, SC-88, SOT-363 (SC-70-6) package.
Yes, it is RoHS3 Compliant.