SI1416EDH-T1-GE3 The Vishay Dale SI1416EDH-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 3.9A. It is available in a surface-mount SOT-363 package.
Mfr Part #:

SI1416EDH-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1416EDH-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 3.9A. It is available in a surface-mount SOT-363 package.
✓ Total Stock: 60,435 pcs
$ Price Range: $0.99

SI1416EDH-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
55,020 pcs
55020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
5,415 pcs
5415 pcs On Request 1 On Request On Request On Request On Request On Request

SI1416EDH-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI1416EDH-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI1416EDH-T1-GE3 is a TrenchFET power MOSFET designed for portable devices. It features a 30V drain-source voltage (VDS) and a continuous drain current (ID) of 3.9A at 25°C case temperature.

 

This N-Channel MOSFET offers low on-resistance, with a maximum of 58mOhm at 3.1A and 10V VGS. It also has a typical gate charge of 3.5 nC at 10V VGS. The device operates over a temperature range of -55°C to 150°C (TJ).

 

Packaged in a compact 6-TSSOP, SC-88, SOT-363 (SC-70-6) footprint, the SI1416EDH-T1-GE3 is suitable for surface mounting. Its typical ESD protection is 1500V in HBM. Applications include DC/DC converters, high-frequency switching, OVP switches, and load switches in portable electronics like smartphones and tablet PCs.

 

The MOSFET is RoHS and Halogen-free compliant. It has a maximum power dissipation of 2.8W at 25°C case temperature and a junction-to-ambient thermal resistance of 80°C/W.

SI1416EDH-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI1416EDH-T1-GE3 N-Channel 30V 3.9A MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

SI1416EDH-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI1416EDH-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1416EDH-T1-GE3 Features

  • TrenchFET power MOSFET technology.
  • 30V drain-source voltage rating.
  • 3.9A continuous drain current.
  • Low on-resistance of 58mOhm max.
  • Compact SOT-363 package.

SI1416EDH-T1-GE3 Applications

  • Suitable for DC/DC converters.
  • Used in high-frequency switching.
  • Ideal for OVP switch applications.
  • Applicable for load switch functions.
  • Designed for portable devices.

SI1416EDH-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the SI1416EDH-T1-GE3?

The drain-source breakdown voltage is 30V.

What is the maximum continuous drain current for the SI1416EDH-T1-GE3?

The maximum continuous drain current is 3.9A at 25°C case temperature.

What is the typical on-resistance of the SI1416EDH-T1-GE3?

The typical on-resistance is 58mOhm at 3.1A and 10V VGS.

What is the operating temperature range for this MOSFET?

The operating junction temperature range is -55°C to 150°C.

What package type is the SI1416EDH-T1-GE3 in?

It is available in a 6-TSSOP, SC-88, SOT-363 (SC-70-6) package.

Is the SI1416EDH-T1-GE3 RoHS compliant?

Yes, it is RoHS3 Compliant.

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