SI1413EDH-T1-E3 The Vishay Dale SI1413EDH-T1-E3 is a P-Channel MOSFET designed for load switching, PA switch, and level switch applications. It features a 20V drain-source voltage and a 2.3A continuous current rating.
Mfr Part #:

SI1413EDH-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1413EDH-T1-E3 is a P-Channel MOSFET designed for load switching, PA switch, and level switch applications. It features a 20V drain-source voltage and a 2.3A continuous current rating.
✓ Total Stock: 3,000 pcs
$ Price Range: $0.99

SI1413EDH-T1-E3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request 0808+ On Request On Request

SI1413EDH-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI1413EDH-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI1413EDH-T1-E3 is a P-Channel TrenchFET® Power MOSFET rated for 20V (Vds) and capable of handling 2.3A (Ta) continuous drain current. It offers low on-resistance, with a maximum of 115mOhm at 2.9A and 4.5V Vgs. The device operates over a temperature range of -55°C to 150°C.

 

This MOSFET is housed in a thermally enhanced SC-70-6 package, suitable for surface mounting. Its applications include load switching, PA switching, and level shifting. The device is ESD protected up to 3000V and is compliant with RoHS Directive 2002/95/EC and Halogen-free standards.

 

Key electrical characteristics include a gate threshold voltage of 450mV (min) at 100µA and a gate charge of 8 nC at 4.5V Vgs. The maximum power dissipation is 1W (Ta) at 25°C. Thermal resistance from junction to ambient is typically 60°C/W (t ≤ 5s).

 

This component is designed for efficient power management in various electronic circuits, offering a balance of performance and compact size for space-constrained designs.

SI1413EDH-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix Si1413EDH P-Channel 20V MOSFET
Subcategory: P-Channel

SI1413EDH-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1413EDH-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1413EDH-T1-E3 Features

  • P-Channel TrenchFET Power MOSFET
  • 20V Drain-Source Voltage Rating
  • 2.3A Continuous Drain Current
  • Low On-Resistance (115mOhm Max)
  • SC-70-6 Surface Mount Package

SI1413EDH-T1-E3 Applications

  • Ideal for load switching tasks
  • Suitable for PA switch circuits
  • Used in level shift applications
  • Efficient power management

SI1413EDH-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI1413EDH-T1-E3?

The drain-source voltage (Vds) is 20V.

What is the maximum continuous drain current?

The continuous drain current is 2.3A at 25°C ambient temperature.

What is the maximum on-resistance (Rds On) for this MOSFET?

The maximum Rds On is 115mOhm at a drain current of 2.9A and gate-source voltage of 4.5V.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI1413EDH-T1-E3 supplied in?

It is supplied in a 6-TSSOP, SC-88, SOT-363 package, specifically the SC-70-6.

Is this MOSFET halogen-free?

Yes, it is halogen-free according to IEC 61249-2-21 definition.

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