| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,442 pcs
|
2442 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI1410EDH-T1-E3 is an N-Channel MOSFET manufactured by Vishay Dale, designed for low-voltage switching applications. It has a maximum drain-to-source voltage (Vdss) of 20V and continuous drain current (Id) of 2.9A at ambient temperature. The on-resistance (Rds(on)) is 70mOhm at 3.7A drain current and 4.5V gate drive, enabling efficient power handling. The gate charge (Qg) is 8nC at 4.5V, supporting fast switching with low gate drive losses. The threshold voltage (Vgs(th)) is 450mV at 250µA, allowing logic-level gate operation at 1.8V or 4.5V drive voltage. The maximum gate-source voltage is ±12V.
The device is rated for power dissipation of 1W and operates over a junction temperature range of -55°C to 150°C. It is housed in a compact SC70-6 surface-mount package, suitable for space-constrained designs. Typical applications include load switching, power management in portable devices, and DC-DC converter circuits where low-voltage control and high efficiency are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
-55°C to 150°C.
450mV at 250µA drain current.
70mΩ at 3.7A drain current with 4.5V gate drive.
8nC at Vgs = 4.5V.
2.9A at ambient temperature.
±12V.