SI1403BDL-T1-GE3 The Vishay Dale SI1403BDL-T1-GE3 is a P-Channel MOSFET designed for various electronic applications. It features a 20V drain-source voltage and a continuous drain current of 1.5A.
Mfr Part #:

SI1403BDL-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1403BDL-T1-GE3 is a P-Channel MOSFET designed for various electronic applications. It features a 20V drain-source voltage and a continuous drain current of 1.5A.
✓ Total Stock: 11,800 pcs
$ Price Range: $0.99

SI1403BDL-T1-GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
11,800 pcs
11800 pcs On Request 1 On Request On Request 1220+ On Request On Request

SI1403BDL-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI1403BDL-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI1403BDL-T1-GE3 is a P-Channel MOSFET belonging to the TrenchFET® power MOSFET family. It is designed for efficient power management in electronic circuits.

 

Key electrical characteristics include a maximum drain-source voltage (VDS) of -20V and a continuous drain current (ID) of -1.5A at 25°C. The on-state resistance (RDS(on)) is as low as 0.150Ω at a gate-source voltage (VGS) of -4.5V. The typical gate charge (Qg) is 2.9nC.

 

This MOSFET operates within a junction temperature range of -55°C to 150°C. It is housed in a compact SC-70-6 package, suitable for surface mounting applications. The maximum power dissipation is rated at 625mW at 25°C ambient temperature.

 

Material categorization is available for compliance definitions. The device is RoHS3 compliant and has an MSL rating of 1.

SI1403BDL-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: SI1403BDL-T1-GE3 P-Channel MOSFET
Subcategory: P-Channel

SI1403BDL-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1403BDL-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1403BDL-T1-GE3 Features

  • P-Channel TrenchFET® power MOSFET.
  • Maximum drain-source voltage of -20V.
  • Continuous drain current of -1.5A.
  • Low on-state resistance of 150mΩ.
  • Compact SC-70-6 surface-mount package.

SI1403BDL-T1-GE3 Applications

  • Suitable for power switching circuits.
  • Ideal for low-voltage applications.
  • Used in portable electronic devices.
  • Efficient for battery-powered systems.

SI1403BDL-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI1403BDL-T1-GE3?

The maximum drain-source voltage is -20V.

What is the continuous drain current of the SI1403BDL-T1-GE3?

The continuous drain current is -1.5A at 25°C.

What is the on-state resistance of the SI1403BDL-T1-GE3?

The maximum on-state resistance is 150mΩ at 1.5A and 4.5V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

What package type is the SI1403BDL-T1-GE3 supplied in?

It is supplied in an SC-70-6 package.

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