| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
37,020 pcs
|
37020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,810 pcs
|
2810 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI1401EDH-T1-GE3 is a P-Channel MOSFET designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 12V and can handle a continuous drain current of 4A (Tc). The MOSFET exhibits a low on-resistance (Rds On) of 34mOhm at a gate-source voltage (Vgs) of 4.5V and a drain current (Id) of 5.5A.
This device operates within a temperature range of -55°C to 150°C (TJ). It is packaged in a compact SC-70-6 (SOT-363) surface-mount case, making it suitable for space-constrained designs. The gate charge (Qg) is 36 nC at 8V, and the gate threshold voltage (Vgs(th)) is 1V at 250µA. The maximum gate-to-source voltage is ±10V.
With a maximum power dissipation of 1.6W (Ta) or 2.8W (Tc), the SI1401EDH-T1-GE3 is a robust component for power management circuits. Its technology is MOSFET (Metal Oxide), and it is classified as a P-Channel FET type.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 12V.
The maximum continuous drain current is 4A at case temperature (Tc).
The maximum on-resistance is 34mOhm at a drain current of 5.5A and gate-to-source voltage of 4.5V.
It is offered in a SC-70-6 surface mount package, also known as 6-TSSOP, SC-88, or SOT-363.
The operating junction temperature range is from -55°C to 150°C.
The maximum gate threshold voltage is 1V at a drain current of 250µA.
It is a P-Channel MOSFET using metal oxide semiconductor technology.