| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
23,711 pcs
|
23711 pcs | On Request | 1 | On Request | On Request | 1228+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Form Factor | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI1400DL-T1-GE3 from Vishay Dale is a single N-Channel MOSFET designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 20V and can handle a continuous current of 1.6A at ambient temperature.
Key electrical characteristics include a maximum Rds On of 150mOhm when tested at 1.7A drain current and 4.5V gate-source voltage. The gate charge (Qg) is rated at a maximum of 4 nC at 4.5V Vgs. The device operates within a temperature range of -55°C to 150°C (TJ).
This MOSFET is housed in a compact SC-70-6 (SOT-363) surface mount package, making it suitable for space-constrained designs. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles. The power dissipation is rated at 568mW (Ta).
Compliance information indicates RoHS3 compliance and Lead Free status. The Moisture Sensitivity Level (MSL) is 1 Unlimited, and REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V
1.6A at Ta
150mOhm maximum at 1.7A, 4.5V
-55°C to +150°C (junction)
SC-70-6 (also known as SOT-363)
4nC at 4.5V Vgs
600mV maximum at 250µA