SI1400DL-T1-E3 The Vishay Dale SI1400DL-T1-E3 is an N-Channel MOSFET designed for surface mount applications. It features a 20V drain-source voltage and a continuous drain current of 1.6A.
Mfr Part #:

SI1400DL-T1-E3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1400DL-T1-E3 is an N-Channel MOSFET designed for surface mount applications. It features a 20V drain-source voltage and a continuous drain current of 1.6A.
✓ Total Stock: 605,667 pcs
$ Price Range: $0.99

SI1400DL-T1-E3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
602,667 pcs
602667 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request 1212+ On Request On Request

SI1400DL-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI1400DL-T1-E3 Description

Short technical summary and product information.

The SI1400DL-T1-E3 from Vishay Dale is a single N-Channel MOSFET designed for various electronic applications. This component operates with a maximum drain-source voltage (Vdss) of 20V and can handle a continuous drain current of up to 1.6A at ambient temperature.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 150mOhm at a gate-source voltage (Vgs) of 4.5V and a drain current (Id) of 1.7A. The gate charge (Qg) is 4nC at Vgs of 4.5V, and the gate threshold voltage (Vgs(th)) is a minimum of 600mV at 250µA. The device supports drive voltages between 2.5V and 4.5V.

 

This MOSFET is housed in a compact SC-70-6 package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ). The maximum power dissipation is rated at 568mW at ambient temperature.

SI1400DL-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: SI1400DL-T1-E3 N-Channel MOSFET
Subcategory: Single

SI1400DL-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1400DL-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1400DL-T1-E3 Features

  • N-Channel MOSFET with 20V drain-source voltage.
  • 1.6A continuous drain current capability.
  • Low Rds On of 150mOhm at 4.5V Vgs.
  • Compact SC-70-6 surface mount package.
  • Wide operating temperature range.

SI1400DL-T1-E3 Applications

  • Suitable for power switching applications.
  • Ideal for low voltage power management.
  • Used in portable electronic devices.
  • General purpose switching applications.

SI1400DL-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage (Vds) of the SI1400DL-T1-E3?

The maximum drain-to-source voltage is 20V.

What is the package type of the SI1400DL-T1-E3?

It is housed in an SC-70-6 package (surface mount).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is this a P-Channel or N-Channel MOSFET?

It is an N-Channel MOSFET.

What is the continuous drain current rating?

Continuous drain current is 1.6A at ambient temperature.

What is the on-resistance (Rds on)?

Maximum on-resistance is 150mOhm at Vgs = 4.5V and Id = 1.7A.

What gate drive voltage levels are supported?

Drive voltage is 2.5V or 4.5V.

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