SI1330EDL-T1-E3 The Vishay Siliconix SI1330EDL-T1-E3 is an N-Channel MOSFET with a 60V drain-source voltage and 240mA continuous drain current. It features a low Rds On of 2.5 Ohms at 10V gate-source voltage.
Mfr Part #:

SI1330EDL-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Siliconix SI1330EDL-T1-E3 is an N-Channel MOSFET with a 60V drain-source voltage and 240mA continuous drain current. It features a low Rds On of 2.5 Ohms at 10V gate-source voltage.
✓ Total Stock: 361,600 pcs
$ Price Range: $0.99

SI1330EDL-T1-E3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
361,600 pcs
361600 pcs On Request 1 On Request On Request On Request On Request On Request

SI1330EDL-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
ESD Protection
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI1330EDL-T1-E3 Description

Short technical summary and product information.

The Vishay Siliconix SI1330EDL-T1-E3 is a TrenchFET Power MOSFET designed for various applications, including P-Channel driver functions in notebook PCs and servers. This N-Channel MOSFET offers a 60V drain-source breakdown voltage and a continuous drain current of 240mA at 25°C ambient temperature.

 

Key electrical characteristics include a maximum drain-source on-resistance of 2.5 Ohms at 250mA drain current and 10V gate-source voltage. The gate threshold voltage is typically 2.0V, with a maximum of 2.5V. It supports drive voltages of 3V and 10V. The device also features ESD protection up to 2000V.

 

Packaged in an SC-70-3 (SOT-323) surface-mount package, the SI1330EDL-T1-E3 operates within a temperature range of -55°C to 150°C. Its power dissipation is rated at 280mW at 25°C ambient temperature. The MOSFET is halogen-free and compliant with RoHS 3 standards.

SI1330EDL-T1-E3 Quick Information

Product Type: MOSFET
Series: Si1
Canonical Name: SI1330EDL-T1-E3 N-Channel 60V MOSFET
Subcategory: N-Channel

SI1330EDL-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1330EDL-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1330EDL-T1-E3 Features

  • N-Channel 60V TrenchFET Power MOSFET
  • 240mA continuous drain current
  • 2.5 Ohm maximum Rds On
  • SC-70-3 surface mount package
  • Halogen-free and RoHS 3 compliant

SI1330EDL-T1-E3 Applications

  • P-Channel driver applications
  • Notebook PC power management
  • Server power solutions

SI1330EDL-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the SI1330EDL-T1-E3?

The drain-source breakdown voltage is 60V.

What is the maximum continuous drain current for the SI1330EDL-T1-E3?

The maximum continuous drain current is 240mA at 25°C ambient temperature.

What is the Rds On (Max) for the SI1330EDL-T1-E3?

The maximum drain-source on-resistance is 2.5 Ohms at 250mA drain current and 10V gate-source voltage.

What is the operating temperature range of the SI1330EDL-T1-E3?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI1330EDL-T1-E3 available in?

The SI1330EDL-T1-E3 is available in an SC-70-3 package.

Is the SI1330EDL-T1-E3 RoHS compliant?

Yes, the SI1330EDL-T1-E3 is RoHS 3 compliant.

Does the SI1330EDL-T1-E3 have ESD protection?

Yes, the SI1330EDL-T1-E3 is ESD protected to 2000V.

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